Ideal memristor based on viscous magnetization dynamics driven by spin torque

Guanxiong Chen; Sergei Ivanov; Sergei Urazhdin

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arXiv · 2006.07996

Ideal memristor based on viscous magnetization dynamics driven by spin torque

Guanxiong Chen·Sergei Ivanov·Sergei Urazhdin

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Abstract

We show that ideal memristors - devices whose resistance is proportional to the charge that flows through them - can be realized using spin torque-driven viscous magnetization dynamics. The latter can be accomplished in the spin liquid state of thin-film heterostructures with frustrated exchange, where memristive response is tunable by proximity to the glass transition, while current-induced Joule heating facilitates nonvolatile operation and second-order memristive functionality beneficial for neuromorphic applications. Ideal memristive behaviors can be achieved in other systems characterized by viscous dynamics of physical, electronic, or magnetic degrees of freedom.

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physics.app-ph cond-mat.dis-nn cond-mat.mes-hall cond-mat.mtrl-sci

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Guanxiong Chen, Sergei Ivanov, Sergei Urazhdin. 2020-06-14. Ideal memristor based on viscous magnetization dynamics driven by spin torque. https://arxiv.org/abs/2006.07996

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