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arXiv · 2006.16740

Optical properties and carrier dynamics in Co-doped ZnO nanorods

Aswathi K. Sivan·Alejandro Galan-Gonzalez·Lorenzo Di Mario·Nicolas Tappy·Javier Hernandez-Ferrer·Daniele Catone·Stefano Turchini·Ana M. Benito·Wolfgang K. Maser·Simon Escobar Steinvall·Anna Fontcuberta i Morral·Andrew Gallant·Dagou A. Zeze·Del Atkinson·Faustino Martelli1
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Abstract

The controlled modification of the electronic properties of ZnO nanorods via transition metal doping is reported. A series of ZnO nanorods were synthesized by chemical bath growth with varying Co content from 0 to 20 atomic % in the growth solution. Optoelectronic behavior was probed using cathodoluminescence, time-resolved luminescence, transient absorbance spectroscopy, and the incident photon-to-current conversion efficiency (IPCE). Analysis indicates the crucial role of surface defects in determining the electronic behavior. Significantly, Co-doping extends the light absorption of the nanorods into the visible region, increases the surface defects, shortens the non-radiative lifetimes, while leaving the radiative lifetime constant. Furthermore, for 1 atomic % Co-doping the IPCE of the ZnO nanorods is enhanced. These results demonstrate that doping can controllably tune the functional electronic properties of ZnO nanorods for applications.

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Aswathi K. Sivan, Alejandro Galan-Gonzalez, Lorenzo Di Mario, Nicolas Tappy, Javier Hernandez-Ferrer, Daniele Catone, Stefano Turchini, Ana M. Benito, Wolfgang K. Maser, Simon Escobar Steinvall, Anna Fontcuberta i Morral, Andrew Gallant, Dagou A. Zeze, Del Atkinson, Faustino Martelli1. 2020-06-30. Optical properties and carrier dynamics in Co-doped ZnO nanorods. https://doi.org/10.1039/d0na00693a

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