arXiv subjects

Del Atkinson

Publications and source records attributed to Del Atkinson.

4 recordsLinked to original sources

arXiv2025

Thermal Evolution of Skyrmions in Synthetic Ferrimagnets of Co/Gd Heterostructure for Topological Spintronic Applications

Synthetic ferrimagnetic (SFiM) multilayers offer a versatile platform for hosting skyrmions with tunable magnetic properties, combining the advantages of ferromagnets and antiferromagnets. Unlike synthetic antiferromagnets, SFiMs retain a finite magnetization that allows direct observation of magnetic textures while still benefiting from reduced dipolar fields and a suppressed skyrmion Hall effect. However, a systematic investigation of their temperature and field dependent magnetization evolution, including the labyrinthine-to-skyrmion transition in Co/Gd-based SFiMs, remains less explored. Here, we demonstrate the stabilization of 70 nm-radius skyrmions at room temperature and reveal how the Co and Gd sublattices influence the temperature-dependent net magnetization. Further, we develop a microscopic spin model for SFiM incorporating the relevant magnetic interactions, which reproduces the experimental observations and captures the temperature-dependent magnetic phase evolution. This framework highlights the interplay of fundamental interactions controlling skyrmion stability in SFiM and provides a pathway for engineering heterostructures for topological spintronic applications.

cond-mat.mtrl-sci↗

arXiv2023

Spinterface Mediated Magnetic Properties of Co20Fe60B20/Alq3 Heterostructures

Organic semiconductors (OSCs) are suitable materials for spintronics applications as they form a spinterface when placed next to a ferromagnet, which in turn leads to novel functionalities. The evolution of spinterface can tune the global magnetic anisotropy, magnetization reversal, magnetization dynamics, etc. Planar tris-(8-hydroxyquinoline)aluminum (Alq3) OSC has shown tremendous potential for spintronics applications, thanks to its efficient spin-polarized current transport ability. Here, we establish the spinterface when the Alq3 molecules are deposited on amorphous ferromagnet Co20Fe60B20(CFB). The $\pi$-d hybridization in CFB/Alq3 enhances the coercive field and significantly modifies the shape and size of the magnetic domains. A $\sim$100% increase in uniaxial anisotropic energies and a reduction in magnetic damping are also evident owing to the strong interfacial hybridization.

cond-mat.mtrl-sci↗

arXiv2020

Optical properties and carrier dynamics in Co-doped ZnO nanorods

The controlled modification of the electronic properties of ZnO nanorods via transition metal doping is reported. A series of ZnO nanorods were synthesized by chemical bath growth with varying Co content from 0 to 20 atomic % in the growth solution. Optoelectronic behavior was probed using cathodoluminescence, time-resolved luminescence, transient absorbance spectroscopy, and the incident photon-to-current conversion efficiency (IPCE). Analysis indicates the crucial role of surface defects in determining the electronic behavior. Significantly, Co-doping extends the light absorption of the nanorods into the visible region, increases the surface defects, shortens the non-radiative lifetimes, while leaving the radiative lifetime constant. Furthermore, for 1 atomic % Co-doping the IPCE of the ZnO nanorods is enhanced. These results demonstrate that doping can controllably tune the functional electronic properties of ZnO nanorods for applications.

cond-mat.mes-hall↗

arXiv2003

Domain wall propagation in magnetic nanowires by spin polarized current injection

We demonstrate movement of a head-to-head domain wall through a magnetic nanowire simply by passing an electrical current through the domain wall and without any external magnetic field applied. The effect depends on the sense and magnitude of the electrical current and allows direct propagation of domain walls through complex nanowire shapes, contrary to the case of magnetic field induced propagation. The efficiency of this mechanism has been evaluated and the effective force acting on the wall has been found equal to 0.88x10-9 N.A-1.

cond-mat.mtrl-sci↗