Analytical Physics-Based Modeling of Electron Channel Density in Nanosheet and Nanowire FETs

G. I. Zebrev; D. S. Malich

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arXiv · 2007.05332

Analytical Physics-Based Modeling of Electron Channel Density in Nanosheet and Nanowire FETs

G. I. Zebrev·D. S. Malich

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Abstract

We propose a general physics-based approach for an accurate analytical calculation of the channel charge density in field-effect transistors as functions of the external gate biases. This approach is based on a consistent consideration of basic electrostatic equation as a balance of electric and chemical potentials which allows us to obtain in a unified way the explicit analytic expressions continuously de-scribing the subthreshold and above threshold regions in nanosheet (symmetric and asymmetric) and nanowire FETs. Two conceptually different definitions of phenomenological threshold voltage are consistently introduced and discussed.

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G. I. Zebrev, D. S. Malich. 2020-07-10. Analytical Physics-Based Modeling of Electron Channel Density in Nanosheet and Nanowire FETs. https://arxiv.org/abs/2007.05332

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