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G. I. Zebrev

Publications and source records attributed to G. I. Zebrev.

13 recordsLinked to original sources
arXiv2025

Soft Error Rate in Space: A Unified Analytical Approach

A new physics-based model for analytical calculation of Soft Error Rate (SER) in digital memory circuits under the influence of heavy ions in space orbits is proposed. This method is based on parameters that are uniquely determined from the results of ground tests under nor-mal ion incidence. It is shown that preliminary averaging over the total solid angle within the standard inverse cosine model allows one to take into account the effect of isotropic flow, which increases the effective SER. The model includes the ability to estimate the contribution to SER of the low LET spectrum region, which is very important for modern ICs with low Single Event Upset tolerance.

physics.app-ph↗
arXiv2021

Analytical Physics-Based Modeling of Electron Channel Density in Nanosheet and Nanowire FETs

We propose a general physics-based approach for an accurate analytical calculation of the channel charge density in field-effect transistors as functions of the external gate biases. This approach is based on a consistent consideration of basic electrostatic equation as a balance of electric and chemical potentials which allows us to obtain in a unified way the explicit analytic expressions continuously de-scribing the subthreshold and above threshold regions in nanosheet (symmetric and asymmetric) and nanowire FETs. Two conceptually different definitions of phenomenological threshold voltage are consistently introduced and discussed.

cond-mat.mes-hall↗
arXiv2019

Gallium Nitride FET Model

We have presented an analytical physics-based compact model of GaN power FET, which can accurately describe the I-V characteristics in all operation modes. The model considers the source-drain resistance, different interface trap densities and self-heating effects.

physics.app-ph↗
arXiv2019

Impact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices

Near-interfacial oxide traps and chemical impurities on the graphene surface or at the graphene-dielectric interface can be a source of intentional or unintentional doping of graphene sheet. The efficiency of such chemical doping can vary in a wide range depending on parameters of graphene field effect devices. Mechanisms of such sensitivity of doping efficiency to the device characteristics need to be understood. The objective of this paper is to theoretically derive the analytical relations, adapted to the explicit calculation of graphene chemical doping.

cond-mat.mes-hall↗
arXiv2019

Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures

This paper describes the radiation response and I-V characteristics of the stacked p-MNOS based RADFETs measured at different dose rates and irradiation temperatures. It is shown that the enhanced charge trapping takes place at the interface of the thick gate dielectrics in the MNOS transistors at low dose rates (ELDRS). The sensitivity of the radiation effect to irradiation temperature has also experimentally revealed. We associate both effects with the temperature and dose rate dependence of the effective charge yield in the thick oxides described within the framework of the previously proposed model. We have also simulated the I-V characteristics of the transistors for different total doses and irradiation conditions. It has been found the used electric and radiation models consistently describe the observed dependencies of the RADFETs sensitivity on dose rates and irradiation temperatures for the devices with different thickness of insulators.

physics.app-ph↗
arXiv2017

Compact Modeling of MOSFET I-V Characteristics and Simulation of Dose-Dependent Drain Currents

We have presented a compact MOSFET model, which allows us to describe the I-V characteristics of irradiated long-channel and short-channel transistors in all operation modes at different measurement temperatures and interface trap densities. The model allows simulating of the off-state and the on-state drain currents of irradiated MOSFETs based on an equal footing. Particularly, a novel compact model of the rebound effect in n-MOSFETs was employed for simulation of the total dose dependencies of drain currents in the highly scaled 60 nm node circuits irradiated up to 1Grad. Compatibility of the model parameter set with BSIM and a single closed form of the model equation imply the possibility of its easy implementation into the standard CAD tools.

cond-mat.mes-hall↗
arXiv2014

Interface traps in graphene field effect devices: extraction methods and influence on characteristics

We study impact of the near-interfacial oxide traps on the C-V and I-V characteristics of graphene gated structures. Methods of extraction of interface trap level density in graphene field effect devices from the capacitance-voltage measurements are described and discussed. It has been found that the effects of electron-electron or hole-hole interactions and electron-hole puddles can be mixed in C-V characteristics putting obstacles in the way of uniquely determined extraction of the interface trap density in graphene. Influence of the interface traps on DC and AC capacitance and conductance characteristics of graphene field-effect structures is described. It has been shown that variety of widths of resistivity peaks in various samples could be explained by different interface trap capacitance values.

cond-mat.mes-hall↗
arXiv2014

Space environments variability and its impact on total dose and single event effects in electronic parts

The aim of this paper is the modeling and simulation of impact of space radiation variability on total dose and single event effects in spaceborne electronics. It has been shown that the simultaneous thermal annealing may lead to non-stationary relaxation after dose-rate peaks. Significant enhancement of soft error rate during solar flares in the memories mitigated by the scrubbing due to non-linear dependence on particle flux has been revealed.

physics.space-ph↗
arXiv2011

Nonequilibrium Diagrammatic Technique for Nanoscale Devices

A general approach based on gauge invariance requirements has been developed for automatic construction of quantum kinetic equation in electron systems, far for equilibrium. Proposed theoretical scheme has high generality and automatism and capable to treat nonequilibrium effects of electron transport, quantum interference and energy dissipation. Dissipative and quantum-interference effects can be consequentially incorporated in the computational scheme through solution of dynamic Dyson equation for self-energies in the framework of the Keldysh diagrammatic technique.

cond-mat.mes-hall↗
arXiv2011

Influence of Interface Traps and Electron-Hole Puddles on Quantum Capacitance and Conductivity in Graphene Field-Effect Transistors

We study theoretically an influence of the near-interfacial insulator traps and electron-hole puddles on the small-signal capacitance and conductance characteristics of the gated graphene structures. Based on the self-consistent electrostatic consideration and taking into account the interface trap capacitance the explicit analytic expressions for charge carrier density and the quantum capacitance as functions of the gate voltage were obtained. This allows to extract the interface trap capacitance and density of interface states from the gate capacitance measurements. It has shown that self-consistent account of the interface trap capacitance enables to reconcile discrepancies in universal quantum capacitance vs the Fermi energy extracted for different samples. The electron-hole puddles and the interface traps impact on transfer I-V characteristics and conductivity has been investigated. It has been shown that variety of widths of resistivity peaks in various samples could be explained by different interface trap capacitance values.

cond-mat.mes-hall↗