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arXiv · 2007.15503

Electro-optical imaging of electric fields in silicon sensors

Robert Klanner·Annika Vauth
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Abstract

A conceptual set-up for measuring the electric field in silicon detectors by electro-optical imaging is proposed. It is based on the Franz-Keldysh effect which describes the electric field dependence of the absorption of light with an energy close to the silicon band gap. Using published data, a measurement accuracy of 1 to 4 kV/cm is estimated. The set-up is intended for determining the electric field in radiation-damaged silicon detectors as a function of irradiation fluence and particle type, temperature and bias voltage. The overall concept and the individual components of the set-up are presented.

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Robert Klanner, Annika Vauth. 2020-07-30. Electro-optical imaging of electric fields in silicon sensors. https://doi.org/10.1016/j.nima.2021.165082

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