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arXiv · 2008.07169

Response of Windowless Silicon Avalanche Photo-Diodes to Electrons in the 90-900 eV Range

Alice Apponi·Gianluca Cavoto·Marco Iannone·Carlo Mariani·Francesco Pandolfi·Daniele Paoloni·Ilaria Rago·Alessandro Ruocco
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Abstract

We report on the characterization of the response of windowless silicon avalanche photo-diodes to electrons in the 90-900 eV energy range. The electrons were provided by a monoenergetic electron gun present in the LASEC laboratories of University of Roma Tre. We find that the avalanche photo-diode generates a current proportional to the current of electrons hitting its active surface. The gain is found to depend on the electron energy $E_e$, and varies from $2.147 \pm 0.027$ (for $E_e = 90$ eV) to $385.8 \pm 3.3$ (for $E_e = 900$ eV), when operating the diode at a bias of $V_{apd} = 350$ V.} This is the first time silicon avalanche photo-diodes are employed to measure electrons with $E_e < 1$ keV.

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Alice Apponi, Gianluca Cavoto, Marco Iannone, Carlo Mariani, Francesco Pandolfi, Daniele Paoloni, Ilaria Rago, Alessandro Ruocco. 2020-08-17. Response of Windowless Silicon Avalanche Photo-Diodes to Electrons in the 90-900 eV Range. https://doi.org/10.1088/1748-0221/15/11/p11015

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