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arXiv · 2009.05118

Analysis of low-threshold optically pumped III-nitride microdisk lasers

Farsane Tabataba-Vakili·Christelle Brimont·Blandine Alloing·Benjamin Damilano·Laetitia Doyennette·Thierry Guillet·Moustafa El Kurdi·Sébastien Chenot·Virginie Brändli·Eric Frayssinet·Jean-Yves Duboz·Fabrice Semond·Bruno Gayral·Philippe Boucaud
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Abstract

Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm2 have been achieved along with narrow linewidths of 0.07 nm and a large peak to background dynamic of 300. We compare this threshold range with the one that can be calculated using a rate equation model. We show that thresholds in the few kW/cm2 range constitute the best that can be achieved with III-nitride quantum wells at room temperature. The sensitivity of lasing on the fabrication process is also discussed.

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Farsane Tabataba-Vakili, Christelle Brimont, Blandine Alloing, Benjamin Damilano, Laetitia Doyennette, Thierry Guillet, Moustafa El Kurdi, Sébastien Chenot, Virginie Brändli, Eric Frayssinet, Jean-Yves Duboz, Fabrice Semond, Bruno Gayral, Philippe Boucaud. 2020-09-10. Analysis of low-threshold optically pumped III-nitride microdisk lasers. https://doi.org/10.1063/5.0015252

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