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arXiv · 2009.13427

Large magnetoresistance observed in α-Sn/InSb heterostructures

Yuanfeng Ding·Huanhuan Song·Junwei Huang·Jinshan Yao·Yu Gu·Lian Wei·Yu Deng·Hongtao Yuan·Hong Lu·Yan-Feng Chen
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Abstract

In this study, we report the epitaxial growth of a series of α-Sn films on InSb substrate by molecular beam epitaxy (MBE) with thickness varying from 10 nm to 400 nm. High qualities of the α-Sn films are confirmed. An enhanced large magnetoresistance (MR) over 450,000% has been observed compared to that of the bare InSb substrate. Thickness, angle and temperature dependent MR are used to demonstrate the effects of α-Sn films on the electrical transport properties.

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Yuanfeng Ding, Huanhuan Song, Junwei Huang, Jinshan Yao, Yu Gu, Lian Wei, Yu Deng, Hongtao Yuan, Hong Lu, Yan-Feng Chen. 2020-09-28. Large magnetoresistance observed in α-Sn/InSb heterostructures. https://arxiv.org/abs/2009.13427

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