arXiv subjects

Hongtao Yuan

Publications and source records attributed to Hongtao Yuan.

At least 19 recordsLinked to original sources

arXiv2026

2.4 GHz Flip-flop Device within Nonequilibrium Superconducting Diode

Superconducting diode effect exhibits asymmetric critical supercurrent and has profound implications for condensed matter physics. The technical appeals of such superconducting diodes are their ultrahigh on-off ratio and diode efficiency for superconducting electronics owing to the dissipationless supercurrent therein. However, realizing superconducting diode operation at high working frequency, which is a key requirement for practical applications, remains elusive and challenging. Here, we demonstrate a polarity-controllable superconducting diode with non-equilibrium Josephson junction and its edge-triggered flip-flop operation at a high frequency up to 2.4 GHz, within a van der Waals superconductor 2M-WS$_2$. By simply tuning the thickness of superconducting 2M-WS$_2$ nanoflakes to engineer inversion asymmetry in the junction, we achieve a high diode efficiency of 67% and an on-off ratio exceeding 10$^5$. Importantly, the pulse width and duty cycle of output pulse signals in such superconducting diode flip-flop devices can be controlled in a broadband frequency range crossing 12 orders of magnitude. Theoretical analysis reveals that the non-equilibrium dynamic nature of supercurrent in these Josephson junctions enables such a high diode operating frequency and the polarity control of supercurrent. The 2.4 GHz non-equilibrium Josephson diode developed here provides a promising platform for advanced superconducting logic circuits and broadband telecommunication applications.

cond-mat.supr-con↗

arXiv2026

Electronic structures across superconductor-insulator transition in Ruddlesden-Popper bilayer nickelate films

High-transition-temperature ($T_{C}$) superconductivity is recently discovered in Ruddlesden-Popper (RP) nickelate films with extraordinarily strong oxidation. While investigating phase diagrams is essential for uncovering the superconducting mechanism, the oxygen-tuned superconductor-insulator transition (SIT) in RP nickelates differs fundamentally from that in cuprates or iron-based systems. Here, we unveil the evolution of electronic structure in RP bilayer nickelate thin films across the SIT, combining angle-resolved photoemission spectroscopy (ARPES) and X-ray absorption spectroscopy (XAS) for both occupied and unoccupied states. In the superconducting state, a coherent quasiparticle band near Fermi level ($E_{F}$) coexists with an incoherent waterfall feature at high energy, paralleling that in cuprates. Approaching the insulating state with oxygen deficiency, the spectral weight of the occupied coherent quasiparticle band is gradually suppressed, accompanied by pronounced density of states redistribution and orbital reconfiguration in unoccupied states. These results reveal the electronic origin of the SIT in the phase diagram, which transcends carrier doping effects and oxygen vacancy states. Our findings point to a decisive role of oxygen in shaping the essential electronic landscape of RP bilayer nickelates, offering crucial insights into the superconducting mechanism.

cond-mat.supr-con↗

arXiv2026

Superconductor-insulator transitions in infinite-layer nickelates controlled via ${operando}$ monitored reduction

Nickelates represent an emerging class of superconductors that demand innovative approaches for structural and electronic phase modulations. Continuous control over superconductor-insulator transition (SIT) in nickelates remains particularly challenging, hindering both fundamental understanding and potential applications. Here, we demonstrate SIT in infinite-layer nickelate superconductors utilizing multiple techniques, including an ${operando}$ monitored reduction (OMR) method. OMR enables ultrawide-range continuous modulation of the Ni 3${d}$ orbital electron occupancy from ~3${d}^7$ to ~3${d}^9$. The 3${d}$ occupancy is calibrated through systematic synchrotron X-ray absorption (XAS), combined with scanning transmission electron microscopy (STEM) annular bright field (ABF) analysis of oxygen atoms. SIT is further modulated via ionic liquid gating and magnetic field. Strikingly different from cuprates, our Nernst effect measurements show that pairing initiates at the onset of the resistive drop. The subsequent emergence of the Meissner effect at zero resistance marks the establishment of global phase coherence. Angle-dependent magnetotransport within the transition temperature regime indicates a mixture of two-dimensional (2D) and three-dimensional (3D) superconducting characters, suggesting the observed SIT deviates from the canonical 2D model. Our results provide a unique perspective on the interplay of structural and electronic phase transitions in the infinite-layer nickelates across the oxygen content-magnetic field-temperature parameter space.

cond-mat.supr-con↗

arXiv2024

Even-integer Quantum Hall Effect in an Oxide Caused by Hidden Rashba Effect

In the presence of high magnetic field, quantum Hall systems usually host both even- and odd-integer quantized states because of lifted band degeneracies. Selective control of these quantized states is challenging but essential to understand the exotic ground states and manipulate the spin textures. Here, we study the quantum Hall effect in Bi2O2Se thin films. In magnetic fields as high as 50 T, we observe only even-integer quantum Hall states, but no sign of odd-integer states. However, when reducing the thickness of the epitaxial Bi2O2Se film to one unit cell, we observe both odd- and even-integer states in this Janus (asymmetric) film grown on SrTiO3. By means of a Rashba bilayer model based on ab initio band structures of Bi2O2Se thin films, we can ascribe the absence of odd-integer states in thicker films to the hidden Rasbha effect, where the local inversion symmetry breaking in two sectors of the [Bi2O2]2+ layer yields opposite Rashba spin polarizations, which compensate with each other. In the one unit cell Bi2O2Se film grown on SrTiO3, the asymmetry introduced by top surface and bottom interface induces a net polar field. The resulting global Rashba effect lifts the band degeneracies present in the symmetric case of thicker films.

cond-mat.mes-hall↗

arXiv2024

Superionic Fluoride Gate Dielectrics with Low Diffusion Barrier for Advanced Electronics

Exploration of new dielectrics with large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near breakdown limit. To address this looming challenge, we demonstrate that rare-earth-metal fluorides with extremely-low ion migration barriers can generally exhibit an excellent capacitive coupling over 20 $μ$F cm$^{-2}$ (with an equivalent oxide thickness of ~0.15 nm and a large effective dielectric constant near 30) and great compatibility with scalable device manufacturing processes. Such static dielectric capability of superionic fluorides is exemplified by MoS$_2$ transistors exhibiting high on/off current ratios over 10$^8$, ultralow subthreshold swing of 65 mV dec$^{-1}$, and ultralow leakage current density of ~10$^{-6}$ A cm$^{-2}$. Therefore, the fluoride-gated logic inverters can achieve significantly higher static voltage gain values, surpassing ~167, compared to conventional dielectric. Furthermore, the application of fluoride gating enables the demonstration of NAND, NOR, AND, and OR logic circuits with low static energy consumption. Notably, the superconductor-to-insulator transition at the clean-limit Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ can also be realized through fluoride gating. Our findings highlight fluoride dielectrics as a pioneering platform for advanced electronics applications and for tailoring emergent electronic states in condensed matters.

cond-mat.mes-hall↗

arXiv2022

Continuous Electrical Manipulation of Magnetic Anisotropy and Spin Flopping in van der Waals Ferromagnetic Devices

Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or out-of-plane directions) have been demonstrated with novel magnetization switching mechanisms for extended device functionalities. Normally, the intrinsic magnetic anisotropy in ferromagnetic materials is unchanged within a fixed direction, and thus, it is difficult to realize multifunctionality devices. Therefore, continuous modulation of magnetic anisotropy in ferromagnetic materials is highly desired but remains challenging. Here, we demonstrate a gate-tunable magnetic anisotropy transition from out-of-plane to canted and finally to in-plane in layered Fe$_5$GeTe$_2$ by combining the measurements of the angle-dependent anomalous Hall effect and magneto-optical Kerr effect with quantitative Stoner-Wohlfarth analysis. The magnetic easy axis continuously rotates in a spin-flop pathway by gating or temperature modulation. Such observations offer a new avenue for exploring magnetization switching mechanisms and realizing new spintronic functionalities.

cond-mat.mtrl-sci↗

arXiv2022

Unconventional Excitonic States with Phonon Sidebands in Layered Silicon Diphosphide

Many-body interactions between quasiparticles (electrons, excitons, and phonons) have led to the emergence of new complex correlated states and are at the core of condensed matter physics and material science. In low-dimensional materials, unique electronic properties for these correlated states could significantly affect their optical properties. Herein, combining photoluminescence, optical reflection measurements and theoretical calculations, we demonstrate an unconventional excitonic state and its bound phonon sideband in layered silicon diphosphide (SiP$_2$), in which the bound electron-hole pair is composed of electrons confined within one-dimensional phosphorus$-$phosphorus chains and holes extended in two-dimensional SiP$_2$ layers. The excitonic state and the emergent phonon sideband show linear dichroism and large energy redshifts with increasing temperature. Within the $GW$ plus Bethe$-$Salpeter equation calculations and solving the generalized Holstein model non-perturbatively, we confirm that the observed sideband feature results from the correlated interaction between excitons and optical phonons. Such a layered material provides a new platform to study excitonic physics and many-particle effects.

cond-mat.mes-hall↗

arXiv2020

Large magnetoresistance observed in α-Sn/InSb heterostructures

In this study, we report the epitaxial growth of a series of α-Sn films on InSb substrate by molecular beam epitaxy (MBE) with thickness varying from 10 nm to 400 nm. High qualities of the α-Sn films are confirmed. An enhanced large magnetoresistance (MR) over 450,000% has been observed compared to that of the bare InSb substrate. Thickness, angle and temperature dependent MR are used to demonstrate the effects of α-Sn films on the electrical transport properties.

cond-mat.mtrl-sci↗

arXiv2020

Observation of topological electronic structure in quasi-1D superconductor TaSe3

Topological superconductors (TSCs), with the capability to host Majorana bound states that can lead to non-Abelian statistics and application in quantum computation, have been one of the most intensively studied topics in condensed matter physics recently. Up to date, only a few compounds have been proposed as candidates of intrinsic TSCs, such as doped topological insulator CuxBi2Se3 and iron-based superconductor FeTe0.55Se0.45. Here, by carrying out synchrotron and laser based angle-resolved photoemission spectroscopy (ARPES), we systematically investigated the electronic structure of a quasi-1D superconductor TaSe3, and identified the nontrivial topological surface states. In addition, our scanning tunneling microscopy (STM) study revealed a clean cleaved surface with a persistent superconducting gap, proving it suitable for further investigation of potential Majorana modes. These results prove TaSe3 as a stoichiometric TSC candidate that is stable and exfoliable, therefore a great platform for the study of rich novel phenomena and application potentials.

cond-mat.mtrl-sci↗

arXiv2020

Emergent electric field control of phase transformation in oxide superlattices

Electric fields can transform materials with respect to their structure and properties, enabling various applications ranging from batteries to spintronics. Recently electrolytic gating, which can generate large electric fields and voltage-driven ion transfer, has been identified as a powerful means to achieve electric-field-controlled phase transformations. The class of transition metal oxides (TMOs) provide many potential candidates that present a strong response under electrolytic gating. However, very few show a reversible structural transformation at room-temperature. Here, we report the realization of a digitally synthesized TMO that shows a reversible, electric-field-controlled transformation between distinct crystalline phases at room-temperature. In superlattices comprised of alternating one-unit-cell of SrIrO3 and La0.2Sr0.8MnO3, we find a reversible phase transformation with a 7% lattice change and dramatic modulation in chemical, electronic, magnetic and optical properties, mediated by the reversible transfer of oxygen and hydrogen ions. Strikingly, this phase transformation is absent in the constituent oxides, solid solutions and larger period superlattices. Our findings open up a new class of materials for voltage-controlled functionality.

cond-mat.mtrl-sci↗

arXiv2019

Multiple Superconducting Transitions in α-Sn Films Grown by Molecular Beam Epitaxy

Gray tin, also known as α-Sn, has been attracting research interest recent years due to its topological nontrivial properties predicted theoretically. The Dirac linear band dispersion has been proved experimentally by angle resolved photoemission spectroscopy. We have grown a series of α-Sn thin film samples in two types with different substrates and thicknesses by molecular beam epitaxy. To explore the possible exotic physical properties related to the topological band structures, we have measured the electrical transport properties of our α-Sn thin film samples and observed multiple superconducting transitions. We have identified the transitions above 4.5 K, besides the transition maybe related to the \b{eta} phase around 3.7 K. The changes of the superconducting properties over time reflect the aging effects in our samples. We have also confirmed the strain effects on the superconducting transitions through altering the relative thickness of our samples.

cond-mat.supr-con↗

arXiv2018

Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System

Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimensional electron systems. In order to disentangle their individual contributions to quantum phenomena, independent tuning of these two parameters is required. Here, by utilizing a hybrid liquid/solid electric dual-gate geometry acting on the conducting LaAlO3/SrTiO3 heterointerface, we obtain an additional degree of freedom to strongly modify the electron confinement profile and thus the strength of interfacial scattering, independent from the carrier density. A dual-gate controlled nonlinear Hall effect is a direct manifestation of this profile, which can be quantitatively understood by a Poisson-Schrodinger subband model. In particular, the large nonlinear dielectric response of SrTiO3 enables a very wide range of tunable density and disorder, far beyond that for conventional semiconductors. Our study provides a broad framework for understanding various reported phenomena at the LaAlO3/SrTiO3 interface.

cond-mat.str-el↗

arXiv2018

The density and disorder tuned superconductor-metal transition in two dimensions

Quantum ground states which arise at atomically controlled oxide interfaces provide an opportunity to address key questions in condensed matter physics, including the nature of two-dimensional (2D) metallic behaviour often observed adjacent to superconductivity. At the superconducting LaAlO3/SrTiO3 interface, a metallic ground state emerges upon the collapse of superconductivity with field-effect gating. Strikingly, such metallicity is accompanied with a pseudogap. Here, we utilize independent control of carrier density and disorder of the interfacial superconductor using dual electrostatic gates, which enables the comprehensive examination of the electronic phase diagram approaching zero temperature. We find that the pseudogap corresponds to precursor pairing, and the onset of long-range phase coherence forms a 2D superconducting dome as a function of the dual gate voltages. The gate-tuned superconductor-metal transitions are driven by macroscopic phase fluctuations of Josephson coupled superconducting puddles.

cond-mat.supr-con↗

arXiv2018

Gate-Induced Interfacial Superconductivity in 1T-SnSe2

Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. Here, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe2, a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature Tc around 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on 1) a 2D Tinkham description of the angle-dependent upper critical field, 2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane approaching zero temperature was found to be 2-3 times higher than the Pauli limit, which might be related to an electric field-modulated spin-orbit interaction. Such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity.

cond-mat.supr-con↗

arXiv2017

Ultrafast, highly-sensitive infrared photodetectors based on two-dimensional oxyselenide crystals

Infrared detection and sensing is deeply embedded in modern technology and human society and its development has always been benefitting from the discovery of new photoelectric response materials. The rise of two-dimensional (2D) materials, thanks to their distinct electronic structure, extreme dimensional confinement and strong light-matter interactions, provides new material platform for next-generation infrared photodetection. Ideal infrared detectors should have fast respond, high sensitivity and air-stability, which is rare to meet at the same time for all existing 2D materials, either graphene, transition metal dichalcogenide or black phosphorous. Herein we demonstrate a new infrared photodetector based on 2D Bi2O2Se crystals, whose main characteristics are superb in the whole 2D family: high sensitivity of ~65 A/W at 1200 nm and ultrafast intrinsic photoresponse of ~1 ps at room temperature. Such great performance is attributed to the suitable electronic bandgap and high carrier mobility of 2D oxyselenide. With additional merits of mass production, excellent stability and flexibility, 2D oxyselenide detectors should open new avenues in highly-sensitive, high-speed, low-cost, flexible infrared photodetection and imaging.

cond-mat.mtrl-sci↗

arXiv2017

Gated Tuned Superconductivity and Phonon Softening in Mono- and Bilayer MoS$_2$

Superconductors at the atomic two-dimensional (2D) limit are the focus of an enduring fascination in the condensed matter community. This is because, with reduced dimensions, the effects of disorders, fluctuations, and correlations in superconductors become particularly prominent at the atomic 2D limit; thus such superconductors provide opportunities to tackle tough theoretical and experimental challenges. Here, based on the observation of ultrathin 2D superconductivity in mono- and bilayer molybdenum disulfide (MoS$_2$) with electric-double-layer (EDL) gating, we found that the critical sheet carrier density required to achieve superconductivity in a monolayer MoS$_2$ flake can be as low as 0.55*10$^{14}$cm$^{-2}$, which is much lower than those values in the bilayer and thicker cases in previous report and also our own observations. Further comparison of the phonon dispersion obtained by ab initio calculations indicated that the phonon softening of the acoustic modes around the M point plays a key role in the gate-induced superconductivity within the Bardeen-Cooper Schrieffer (BCS) theory framework. This result might help enrich the understanding of 2D superconductivity with EDL gating.

cond-mat.mes-hall↗

arXiv2015

High responsivity phototransistors based on few-layer ReS2 for weak signal detection

Two-dimensional transition metal dichalcogenides are emerging with tremendous potential in many optoelectronic applications due to their strong light-matter interactions. To fully explore their potential in photoconductive detectors, high responsivity and weak signal detection are required. Here, we present high responsivity phototransistors based on few-layer rhenium disulfide (ReS2). Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88,600 A W-1, which is a record value compared to other two-dimensional materials with similar device structures and two orders of magnitude higher than that of monolayer MoS2. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few-layer ReS2 flakes. It further enables the detection of weak signals, as successfully demonstrated with weak light sources including a lighter and limited fluorescent lighting. Our studies underscore ReS2 as a promising material for future sensitive optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2015

Raman vibrational spectra of bulk to monolayer ReS2 with lower symmetry

Lattice structure and symmetry of two-dimensional (2D) layered materials are of key importance to their fundamental mechanical, thermal, electronic and optical properties. Raman spectroscopy, as a convenient and nondestructive tool, however has its limitations on identifying all symmetry allowing Raman modes and determining the corresponding crystal structure of 2D layered materials with high symmetry like graphene and MoS2. Due to lower structural symmetry and extraordinary weak interlayer coupling of ReS2, we successfully identified all 18 first-order Raman active modes for bulk and monolayer ReS2. Without van der Waals (vdW) correction, our local density approximation (LDA) calculations successfully reproduce all the Raman modes. Our calculations also suggest no surface reconstruction effect and the absence of low frequency rigid-layer Raman modes below 100 cm-1. Combining with Raman and LDA thus provides a general approach for studying the vibrational and structural properties of 2D layered materials with lower symmetry.

cond-mat.mes-hall↗