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arXiv · 2009.13705

Prediction of Intrinsic Triferroicity in Two-Dimensional Lattice

Shiying Shena·Yandong Ma·Xilong Xu·Baibiao Huang·Liangzhi Kou·Ying Dai
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Abstract

Intrinsic triferroicity is essential and highly sought for novel device applications, such as high-density multistate data storage. So far, the intrinsic triferroicity has only been discussed in three-dimensional systems. Herein on basis of first-principles, we report the intrinsic triferroicity in two-dimensional lattice. Being exfoliatable from the layered bulk, single-layer FeO2H is shown to be an intrinsically triferroic semiconductor, presenting antiferromagnetism, ferroelasticity and ferroelectricity simultaneously. Moreover, the directional control of its ferroelectric polarization is achievable by 90{\deg} reversible ferroelastic switching. In addition, single-layer FeO2H is identified to harbor in-plane piezoelectric effect. The unveiled phenomena and mechanism of triferroics in this two-dimensional system not only broaden the scientific and technological impact of triferroics but also enable a wide range of nanodevice applications.

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Shiying Shena, Yandong Ma, Xilong Xu, Baibiao Huang, Liangzhi Kou, Ying Dai. 2020-09-29. Prediction of Intrinsic Triferroicity in Two-Dimensional Lattice. https://doi.org/10.1103/physrevb.103.144101

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