arXiv subjects

Liangzhi Kou

Publications and source records attributed to Liangzhi Kou.

At least 19 recordsLinked to original sources

arXiv2026

Polarization Dynamics in Ferroelectrics: Insights Enabled by Machine Learning Molecular Dynamics

Ferroelectric materials with switchable spontaneous polarization underpin non-volatile memories, transistors, sensors, and emerging neuromorphic chips. Their performance and stability are governed by polarization dynamics and domain kinetics, making a microscopic understanding of these processes and precise atomic level control of polarization domains key challenges for next-generation ferroelectric electronics. Due to the limitations of the characterization technology with atomic level in experiment, high precision atomic simulations become important. First principles calculations are inherently limited in accessible length and time scales, making it difficult to capture the complex features of dynamic processes. Machine learning molecular dynamics (MLMD) offers a compelling solution by encoding quantum-mechanical accuracy into force fields, thereby enabling large scale dynamic simulations with near first-principles fidelity. This Perspective highlights the advantages of MLMD for simulating polarization switching, domain nucleation and migration, topological polar textures and curvature-driven ferroelectric phenomena, while providing a systematic overview of recent progress in these areas. We further discuss methodological challenges that limit predictive capability, including long range electrostatics, coupled lattice-spin degrees of freedom in multiferroics, and data efficient pre-training of large atomistic models. Corresponding advances in long range aware force fields, spin dependent machine learning models, and large scale pretraining are expected to move MLMD toward a genuinely predictive framework for the design of ferroelectric and multiferroic materials.

cond-mat.mtrl-sci↗

arXiv2025

Ferroelectric Domains and Evolution Dynamics in Twisted CuInP2S6 Bilayers

Polar domains and their manipulation-particularly the creation and dynamic control-have garnered significant attention, owing to their rich physics and promising applications in digital memory devices. In this work, using density functional theory (DFT) and deep learning molecular dynamics (DLMD) simulations, we demonstrate that polar domains can be created and manipulated in twisted bilayers of ferroelectric CuInP2S6, as a result of interfacial ferroelectric (antiferroelectric) coupling in AA (AB) stacked region. Unlike the topological polar vortex and skyrmions observed in superlattices of (PbTiO3)n/(SrTiO3)n and sliding bilayers of BN and MoS2, the underlying mechanism of polar domain formation in this system arises from stacking-dependent energy barriers for ferroelectric switching and variations in switching speeds under thermal perturbations. Notably, the thermal stability and polarization lifetimes are highly sensitive to twist angles and temperature, and can be further manipulated by external electric fields and strain. Through multi-scale simulations, our study provides a novel approach to exploring how twist angles influence domain evolution and underscores the potential for controlling local polarization in ferroelectric materials via rotational manipulation.

cond-mat.mtrl-sci↗

arXiv2023

Ferroelectric Domain and Switching Dynamics in Curved In2Se3: First Principle and Deep Learning Molecular Dynamics Simulations

Complex strain status can exist in 2D materials during their synthesis process, resulting in significant impacts on the physical and chemical properties. Despite their prevalence in experiments, their influence on the material properties and the corresponding mechanism are often understudied due to the lack of effective simulation methods. In this work, we investigated the effects of bending, rippling, and bubbling on the ferroelectric domains in In2Se3 monolayer by density functional theory (DFT) and deep learning molecular dynamics (DLMD) simulations. The analysis of the tube model shows that bending deformation imparts asymmetry into the system, and the polarization direction tends to orient towards the tensile side, which has a lower energy state than the opposite polarization direction. The energy barrier for polarization switching can be reduced by compressive strain according DFT results. The dynamics of the polarization switching is investigated by the DLMD simulations. The influence of curvature and temperature on the switching time follows the Arrhenius-style function. For the complex strain status in the rippling and bubbling model, the lifetime of the local transient polarization is analyzed by the autocorrelation function, and the size of the stable polarization domain is identified. Local curvature and temperature can influence the local polarization dynamics following the proposed Arrhenius-style equation. Through cross-scale simulations, this study demonstrates the capability of deep-learning potentials in simulating polarization for ferroelectric materials. It further reveals the potential to manipulate local polarization in ferroelectric materials through strain engineering.

cond-mat.mtrl-sci↗

arXiv2023

Magnetic Electrides: High-Throughput Material Screening, Intriguing Properties, and Applications

Electrides are a unique class of electron-rich materials where excess electrons are localized in interstitial lattice sites as anions, leading to a range of unique properties and applications. While hundreds of electrides have been discovered in recent years, magnetic electrides have received limited attention, with few investigations into their fundamental physics and practical applications. In this work, 51 magnetic electrides (12 antiferromagnetic, 13 ferromagnetic, and 26 interstitial-magnetic) were identified using high-throughput computational screening methods and the latest Material Project database. Based on their compositions, these magnetic electrides can be classified as magnetic semiconductors, metals, or half-metals, each with unique topological states and excellent catalytic performance for N2 fixation due to their low work functions and excess electrons. The novel properties of magnetic electrides suggest potential applications in spintronics, topological electronics, electron emission, and as high-performance catalysts. This work marks the beginning of a new era in the identification, investigation, and practical applications of magnetic electrides.

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arXiv2022

Layer-Polarized Anomalous Hall Effect in Valleytronic van der Waals Bilayers

Layer-polarized anomalous Hall effect (LP-AHE), derived from the coupling between Berry curvature and layer degree of freedom, is of importance for both fundamental physics and device applications. Nonetheless, the current research paradigm is rooted in topological systems, rendering such phenomenon rather scarce. Here, through model analysis, we propose an alternative, but general mechanism to realize the LP-AHE in valleytronic van der Waals bilayers by interlayer sliding. The interaction between the out-of-plane ferroelectricity and A-type antiferromagnetism gives rise to the layer-locked Berry curvature and thus the long-sought LP-AHE in the bilayer systems. The LP-AHE can be strongly coupled with sliding ferroelectricity, to enable ferroelectrically controllable and reversible. The mechanism is demonstrated in a series of real valleytronic materials, including bilayer VSi2P4, VSi2N4, FeCl2, RuBr2 and VClBr. The new mechanism and phenomena provide a significant new direction to realize LP-AHE and explore its application in electronics.

cond-mat.mtrl-sci↗

arXiv2021

Ferroelectric materials and their applications in green catalysis

The demand for renewable and environmentally friendly energy source has attracted extensive research on high performance catalysts. Ferroelectrics which are a class of materials with a switchable polarization are the unique and promising catalyst candidates due to the significant effects of polarization on surfaces physical and chemical properties. The band bending at the ferroelectric/semiconductor interface induced by the polarization flip promotes the charge separation and transfer, there by enhancing the photocatalytic performance. More importantly, the reactants can be selectively adsorbed on the surface of the ferroelectric materials depending on the polarization direction, which can effectively lift the basic limitations as imposed by Sabatier principle on catalytic activity. This review summarizes the latest developments of ferroelectric materials, and introduces the ferroelectric-related catalytic application. The possible research directions of 2D ferroelectric materials in chemical catalysis is discussed at the end. The review is expected to inspire the extensive research interests from physical, chemical and material science communities.

cond-mat.mtrl-sci↗

arXiv2021

Multiple-Fold Fermions and Topological Fermi Arcs Induced Catalytic Enhancement in Nanoporous Electride C12A7

Topological materials are recently regarded as the idea catalysts due to the protected surface metallic states and high carrier mobility, however the fundamental mechanism and the underlying relationship between the catalytic performance and topological states are in debate. Here, by means of symmetry analysis and first-principles calculations, we discover that the electride material of C12A7 hosts the multiple-fold fermions due to the interstitial-electrons, with the sixfold- and fourfold- degenerate points locating at high symmetric points near the Fermi energy, which are identified as the underlying reason of the enhanced catalytic ability in C12A7-based catalysts. The multiple-fold fermions exhibit much longer Fermi arcs on the (001) surface than traditional Weyl/Dirac fermions, the surface is thus highly chemical active and possesses a low Gibbs free energy for the hydrogen evolution reaction. The underlying relationship between catalytic performance and the topological surface state is explicitly verified by artificially hole doping, external strain and similar electride without the Fermi arcs, where the Gibbs free energies are significantly increased when the Fermi arcs is shifted to higher energy level. This work offers a guiding principle for understanding catalytic nature of electrides and the topological quantum catalysts.

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arXiv2021

Intertwined Ferroelectricity and Topological State in Two-Dimensional Multilayer

The intertwined ferroelectricity and band topology will enable the non-volatile control of the topological states, which is of importance for nanoelectrics with low energy costing and high response speed. Nonetheless, the principle to design the novel system is unclear and the feasible approach to achieve the coexistence of two parameter orders is absent. Here, we propose a general paradigm to design 2D ferroelectric topological insulators by sliding topological multilayers on the basis of first-principles calculations. Taking trilayer Bi2Te3 as a model system, we show that in the van der Waals multilayer based 2D topological insulators, the in-plane and out-of-plane ferroelectricity can be induced through a specific interlayer sliding, to enable the coexistence of ferroelectric and topological orders. The strong coupling of the order parameters renders the topological states sensitive to polarization flip, realizing non-volatile ferroelectric control of topological properties. The revealed design-guideline and ferroelectric-topological coupling not only are useful for the fundamental research of the coupled ferroelectric and topological physics in 2D lattices, but also enable novel applications in nanodevices.

cond-mat.mtrl-sci↗

arXiv2020

Prediction of Intrinsic Triferroicity in Two-Dimensional Lattice

Intrinsic triferroicity is essential and highly sought for novel device applications, such as high-density multistate data storage. So far, the intrinsic triferroicity has only been discussed in three-dimensional systems. Herein on basis of first-principles, we report the intrinsic triferroicity in two-dimensional lattice. Being exfoliatable from the layered bulk, single-layer FeO2H is shown to be an intrinsically triferroic semiconductor, presenting antiferromagnetism, ferroelasticity and ferroelectricity simultaneously. Moreover, the directional control of its ferroelectric polarization is achievable by 90° reversible ferroelastic switching. In addition, single-layer FeO2H is identified to harbor in-plane piezoelectric effect. The unveiled phenomena and mechanism of triferroics in this two-dimensional system not only broaden the scientific and technological impact of triferroics but also enable a wide range of nanodevice applications.

cond-mat.mtrl-sci↗

arXiv2020

Two-dimensional Janus van der Waals heterojunctions: a review of recent research progresses

Two-dimensional Janus van der Waals (vdW) heterojunctions, referring to the junction containing at least one Janus material, are found to exhibit tuneable electronic structures, wide light adsorption spectra, controllable contact resistance, and sufficient redox potential due to the intrinsic polarization and unique interlayer coupling. These novel structures and properties are promising for the potential applications in electronics and energy conversion devices. To provide a comprehensive picture about the research progress and guide the following investigations, here we summarize their fundamental properties of different types of two-dimensional Janus vdW heterostructures including electronic structure, interface contact and optical properties, and discuss the potential applications in electronics and energy conversion devices. The further challenges and possible research directions of the novel heterojunctions are discussed at the end of this review.

cond-mat.mtrl-sci↗

arXiv2020

Multiferroic Decorated Fe2O3 Monolayer Predicted from First Principles

Two-dimensional (2D) multiferroics exhibit cross-control capacity between magnetic and electric responses in reduced spatial domain, making them well suited for next-generation nanoscale devices; however, progress has been slow in developing materials with required characteristic properties. Here we identify by first-principles calculations robust 2D multiferroic behaviors in decorated Fe2O3 monolayer, showcasing N@Fe2O3 as a prototypical case, where ferroelectricity and ferromagnetism stem from the same origin, namely Fe d-orbit splitting induced by the Jahn-Teller distortion and associated crystal field changes. The resulting ferromagnetic and ferroelectric polarization can be effectively reversed and regulated by applied electric field or strain, offering efficient functionality. These findings establish strong materials phenomena and elucidate underlying physics mechanism in a family of truly 2D multiferroics that are highly promising for advanced device applications.

cond-mat.mtrl-sci↗

arXiv2020

Robust Magnetoelectric Effect in Decorated Graphene/In2Se3 Heterostructure

Magnetoelectric effect is a fundamental physics phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging field of spintronics. Here, we show by first-principles studies that ferroelectric (FE) polarization of an In2Se3 monolayer can modulate the magnetism of an adjacent transition-metal (TM) decorated graphene layer via an FE induced electronic transition. The TM nonbonding d-orbital shifts downward and hybridizes with carbon p states near the Fermi level, suppressing the magnetic moment, under one FE polarization, but on reversed FE polarization this TM d-orbital moves upward, restoring the original magnetic moment. This finding of robust magnetoelectric effect in TM decorated graphene/In2Se3 heterostructure offers powerful insights and a promising avenue for experimental exploration of FE controlled magnetism in 2D materials.

cond-mat.mtrl-sci↗

arXiv2020

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-FeCl2

Valley, as a new degree of freedom for electrons, has drawn considerable attention due to its significant potential for encoding and storing information. Lifting the energy degeneracy to achieve valley polarization is necessary for realizing valleytronic devices. Here, on the basis of first-principles calculations, we show that single-layer FeCl2 exhibits a large spontaneous valley polarization (~101 meV) arising from the broken time-reversal symmetry and spin-orbital coupling, which can be continuously tuned by varying the direction of magnetic crystalline. By employing the perturbation theory, the underlying physical mechanism is unveiled. Moreover, the coupling between valley degree of freedom and ferromagnetic order could generate a spin- and valley-polarized anomalous Hall current in the presence of the in-plane electric field, facilitating its experimental exploration and practical applications.

cond-mat.mtrl-sci↗

arXiv2019

Reversible Gas Sensing by Ferroelectric Switch and 2D Molecule Multiferroics in In2Se3 Monolayer

Two-dimensional ferroelectrics are important quantum materials which have found novel application in nonvolatile memories, however, the effects of reversible polarization on chemical reactions and interaction with environments are rarely studied despite of its importance. Here, based on the first-principles calculations, we found distinct gas adsorption behaviors on the surfaces of ferroelectric In2Se3 layer and the reversible gas caption and release controlled by ferroelectric switch. We rationalize the novel phenomena to the synergistic effect of the different electrostatic potential and electron transfer induced by band alignments between frontier molecular orbitals of gas and band edge states of substrate. Excitingly, the adsorption of paramagnetic gas molecules such as NO and NO2 can induce surface magnetism, which is also sensitive to ferroelectric polarization direction of In2Se3, indicating the application of In2Se3 as threshold magnetic sensors or switcher. Furthermore, it is suggested two NO molecules prefer to ferromagnetically couple with each other, the Curie temperature is polarization dependent which can reach up to 50K, leading to the long-sought 2D molecule multiferroics. The ferroelectric controllable adsorption behavior and molecule multiferroic feature will find extensive application in gas caption, selective catalytic reduction and spintronic device.

cond-mat.mtrl-sci↗

arXiv2018

Two-Dimensional Ferroelastic Topological Insulators in Single-Layer Janus Transition Metal Dichalcogenides MSSe (M=Mo, W)

Two-dimensional topological insulators and two-dimensional materials with ferroelastic characteristics are intriguing materials and many examples have been reported both experimentally and theoretically. Here, we present the combination of both features - a two-dimensional ferroelastic topological insulator that simultaneously possesses ferroelastic and quantum spin Hall characteristics. Using first-principles calculations, we demonstrate Janus single-layer MSSe (M=Mo, W) stable two-dimensional crystals that show the long-sought ferroelastic topological insulator properties. The material features low switching barriers and strong ferroelastic signals, beneficial for applications in nonvolatile memory devices. Moreover, their topological phases harbor sizeable nontrivial band gaps, which supports the quantum spin Hall effect. The unique coexistence of excellent ferroelastic and quantum spin Hall phases in single-layer MSSe provides extraordinary platforms for realizing multi-purpose and controllable devices.

cond-mat.mtrl-sci↗

arXiv2016

Discovery of a two-dimensional topological insulator in SiTe

Two-dimensional (2D) topological insulators (TIs), a new state of quantum matter, are promising for achieving the low-power-consuming electronic devices owning to the remarkable robustness of their conducting edge states against backscattering. Currently, the major challenge to further studies and possible applications is the lack of suitable materials, which should be with high feasibility of fabrication and sizeable nontrivial gaps. Here, we demonstrate through first-principles calculations that SiTe 2D crystal is a promising 2D TI with a sizeable nontrivial gap of 0.220 eV. This material is dynamically and thermally stable. Most importantly, it could be easily exfoliated from its three-dimensional superlattice due to the weakly bonded layered structure. Moreover, strain engineering can effectively control its nontrivial gap and even induce a topological phase transition. Our results provide a realistic candidate for experimental explorations and potential applications of 2D TIs.

cond-mat.mtrl-sci↗

arXiv2016

Borophane: Stable Two-dimensional Anisotropic Dirac Material with Ultrahigh Fermi Velocity

Recent synthesis of monolayer borophene (triangle boron monolayer) on the substrate opens the era of boron nanosheet (Science, 350, 1513, $\mathbf{2015}$), but the structural stability and novel physical properties are still open issues. Here we demonstrated borophene can be stabilized with fully surface hydrogenation, called as borophane, from first-principles calculations. Most interesting, it shows that borophane has direction-dependent Dirac cones, which are mainly contributed by in-plane \emph{p$_{x}$} and \emph{p$_{y}$} orbitals of boron atoms. The Dirac fermions possess an ultrahigh Fermi velocity up to 3.0$\times$10$^{6}$ m/s, 4 times higher than that of graphene. The Young's modules are calculated to be 129 and 200 GPa$\cdot$nm along two different directions, which is comparable with steel. The ultrahigh Fermi velocity and high mechanical feature render borophane ideal for nanoelectronics applications.

cond-mat.mtrl-sci↗

arXiv2016

Superhigh moduli and tension-induced phase transition of monolayer gamma-boron at finite temperatures

Two dimensional (2D) gamma-boron (γ-B28) thin films have been firstly reported by the experiments of the chemical vapor deposition in the latest study [Tai et al., Angew. Chem. Int. Ed. 54, 1-6 (2015)]. However, their mechanical properties are still not clear. Here we predict the superhigh moduli (1460 GPa at 1 K and 744 GPa at 300 K) and the tension-induced phase transition of monolayer γ-B28 along a zigzag direction for large deformations at finite temperatures using molecular dynamics (MD) simulations. The new phase can be kept stable after unloading process at these temperatures. The predicted mechanical properties are reasonable with our results from density functional theory. This study provides physical insights into the origins of the new phase transition of monolayer γ-B28 at finite temperatures.

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