Thermally-Driven Charge-Density-Wave Transitions in 1T-TaS2 Thin-Film Devices: Prospects for GHz Switching Speed

Amirmahdi Mohammadzadeh; Saba Baraghani; Shenchu Yin; Fariborz Kargar; Jonathan P. Bird; Alexander A. Balandin

doi:10.1063/5.0044459

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arXiv · 2101.06703

Thermally-Driven Charge-Density-Wave Transitions in 1T-TaS2 Thin-Film Devices: Prospects for GHz Switching Speed

Amirmahdi Mohammadzadeh·Saba Baraghani·Shenchu Yin·Fariborz Kargar·Jonathan P. Bird·Alexander A. Balandin

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Abstract

We report on the room-temperature switching of 1T-TaS2 thin-film charge-density-wave devices, using nanosecond-duration electrical pulsing to construct their time-resolved current-voltage characteristics. The switching action is based upon the nearly-commensurate to incommensurate charge-density-wave phase transition in this material, which has a characteristic temperature of 350 K at thermal equilibrium. For sufficiently short pulses, with rise times in the nanosecond range, self-heating of the devices is suppressed, and their current-voltage characteristics are weakly non-linear and free of hysteresis. This changes as the pulse duration is increased to 200 ns, where the current develops pronounced hysteresis that evolves non-monotonically with the pulse duration. By combining the results of our experiments with a numerical analysis of transient heat diffusion in these devices, we clearly reveal the thermal origins of their switching. In spite of this thermal character, our modeling suggests that suitable reduction of the size of these devices should allow their operation at GHz frequencies.

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Amirmahdi Mohammadzadeh, Saba Baraghani, Shenchu Yin, Fariborz Kargar, Jonathan P. Bird, Alexander A. Balandin. 2021-01-17. Thermally-Driven Charge-Density-Wave Transitions in 1T-TaS2 Thin-Film Devices: Prospects for GHz Switching Speed. https://doi.org/10.1063/5.0044459

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