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Fariborz Kargar

Publications and source records attributed to Fariborz Kargar.

At least 19 recordsLinked to original sources

Charge-Density-Wave Phase Transitions in Monolayer 1T-TaS2 from Universal Machine Learning Molecular Dynamics

Charge-density-wave (CDW) phases in 1T transition-metal dichalcogenides arise from strong electron-phonon coupling and accompanying lattice instabilities. Capturing their temperature-dependent structural evolution using conventional first-principles molecular dynamics (MD) remains challenging because of the large supercells and extensive finite-temperature sampling required. Here, we combine density functional theory (DFT), universal machine-learning interatomic potentials (MLIPs), MD, and temperature-dependent effective potential phonon calculations to investigate the structural and vibrational signatures of CDW transitions in monolayer 1T-TaS2. Benchmarking against DFT displacement energies identifies UMA-s-1p1 universal machine learning potentials with sufficient accuracy for subsequent finite-temperature simulations. Our results show that large-scale MD simulations reproduce the experimentally observed phase transition sequence from the low-temperature Star-of-David (SoD) distorted structure to the high-temperature primitive hexagonal structure, as quantified by the number of Ta atoms attributed to SoDs. Heating-cooling cycles exhibit thermal hysteresis, and upon cooling, the system freezes into a multi-domain state in which α and \b{eta} CDW chiralities nucleate independently and persist to the lowest temperatures. These findings demonstrate that carefully benchmarked universal MLIPs can provide a scalable framework for finite-temperature studies of CDW materials.

cond-mat.mtrl-sci↗

Angle-Resolved Cryogenic Brillouin-Mandelstam Spectroscopy of Surface and Bulk Acoustic Phonons in Diamond

We used angle-resolved Brillouin-Mandelstam light-scattering spectroscopy to monitor surface and bulk acoustic phonons in diamond along the <100> and <110> crystallographic directions across a temperature range from 10 K to 300 K. The frequencies and phase velocities were measured for three types of surface acoustic phonons: Rayleigh waves, shear horizontal waves, and high-frequency pseudo-longitudinal waves. All surface acoustic phonons exhibit weak temperature dependence, with the largest observed change of 1.6% across the examined temperature range. The frequencies of all three types of surface acoustic phonons agree with the theoretical values within the experimental uncertainty. Cryogenic surface-acoustic-phonon data are important for diamond-based quantum sensors, surface acoustic wave devices, and other electronic technologies. Knowledge of surface acoustic phonons can also be used for developing accurate models for thermal transport between interfaces.

cond-mat.mtrl-sci↗

Electronic-Structure Correlations Governing Superconductivity in Nb-Based High-Entropy Alloys

Superconducting high-entropy alloys have recently emerged as a new platform for exploring superconductivity in highly disordered metallic systems and may offer advantages for applications requiring mechanical robustness and tolerance to extreme environments. Yet the mechanisms that govern their superconductivity, particularly the roles of lattice distortion and complex local order, both inherent to high-entropy alloys, remain unclear. The conventional valence-electron-concentration rule fails to reliably predict superconducting behavior, motivating a correlation analysis that links performance to electronic structure and lattice disorder. Here, we study a systematic series of niobium-based body-centered-cubic high-entropy alloys, from binary to quinary compositions, designed to investigate the electronic and structural effects and identify the dominant factors controlling superconductivity. Our experimental results reveal that the superconducting critical properties evolve non-monotonically with alloy complexity. Interestingly, alloys with greater lattice distortion can still achieve higher critical temperature and upper critical field. These observations are corroborated by first-principles and Eliashberg analyses, which identify the position of the niobium d-band relative to the Fermi level as the primary driver of electron-phonon coupling, critical temperature, and upper critical field, with lattice distortion serving as a secondary modifier that generally weakens coupling. We consolidate these findings into a detailed correlation map linking superconducting properties to electronic-structure fingerprints and vibrational signatures, establishing a mechanism-informed design strategy for superconducting high-entropy alloys with enhanced critical temperature and field.

cond-mat.supr-con↗

Phonon Signatures of Near-Room-Temperature Phase Transition in Quasi-One-Dimensional Bi4I4 Topological van der Waals Material

The quasi-one-dimensional material Bi4I4 hosts two crystallographically similar polymorphs that realize distinct topological insulating phases separated by a first-order structural transition near room temperature. This transition occurs without a change in space group, arising instead from a subtle rearrangement of chain stacking registry. Polarization-resolved Raman spectroscopy directly resolves this structural-topological phase transition through abrupt, hysteretic modifications of the phonon spectrum. Angle-dependent measurements establish the symmetry of the dominant Raman-active modes and require a complex Raman tensor formalism to account for absorption-induced phase effects. Across the transition, selected phonon modes exhibit discontinuous, reversible shifts in frequency, linewidth, and relative intensity despite the absence of a space-group change. Density functional theory calculations reproduce the direction of the observed phonon renormalizations and confirm their sensitivity to stacking-dependent force constants. These results demonstrate that polarization-resolved Raman spectroscopy can detect subtle stacking-driven structural rearrangements that underlie topological band character, even when global crystallographic symmetry remains unchanged. The obtained results provide valuable insights into the interplay among lattice dynamics, structural distortions, and topological properties in this class of low-dimensional materials, with strong potential for unique functionalities.

cond-mat.mtrl-sci↗

Anomalous spin-lattice coupling in a 2D antiferromagnetic semiconductor revealed by surface acoustic Rayleigh waves

Magnetic order in van der Waals magnets can strongly influence their lattice dynamics, yet how this interaction manifests across different phonon length scales remains unclear. Optical phonons probe bond-scale exchange modulation and short-range spin correlations, whereas long-wavelength acoustic modes couple to uniform strain fields and are sensitive to the renormalization of the macroscopic elastic tensor associated with long-range magnetic order. Experimentally accessing these low-energy acoustic excitations in low-dimensional crystals is challenging due to their low energies and the small lateral dimensions of exfoliated samples. Here, we employ angle-resolved Brillouin-Mandelstam scattering spectroscopy to investigate the surface acoustic phonon spectrum of exfoliated NiPS3 thin films across their antiferromagnetic transition temperature. Our results show a single Rayleigh surface mode whose phase velocity exhibits a pronounced 5.5% softening upon cooling through the Neel temperature. This anomaly reflects a giant magnetoelastic renormalization of the long-wavelength elastic constants triggered by the onset of zigzag antiferromagnetic order. First-principles calculations of the full elastic tensor, combined with continuum finite-element modelling of the NiPS3/SiO2/Si heterostructure, reproduce both the Rayleigh-wave dispersion and its magnetic-order-induced shift. The obtained results reveal how microscopic exchange interactions shape macroscopic mechanical properties in two-dimensional antiferromagnetic semiconductors, providing a basis for lattice-controlled magnetism and magnetically tunable phononic, magnonic, and strain-mediated spintronic device concepts.

cond-mat.mtrl-sci↗

Quantum Spin Singlet and Classical Néel-Ordered Ground States in MoX3 (X = I, Br) Spin-3/2 Dimerized Antiferromagnetic Chain Crystals

We report that MoX3 (X = I, Br) are rare van der Waals materials that exhibit signatures of both quantum spin chains with a spin singlet ground state and classical Neel order. Bulk single crystals grown by chemical vapor transport exhibit classical antiferromagnetic ground states with a transition temperature of ~40 K as revealed by susceptibility and specific heat measurements. Above 40 K, the susceptibilities show the large, broad peaks associated with a quantum spin-singlet ground state and large singlet-triplet gaps of 21 meV and 25 meV. Monte Carlo simulations, density matrix renormalization-group calculations for finite spin-3/2 chains, and density functional theory reproduce the experimental behavior, confirming the interplay between strong one-dimensional intrachain and weak three-dimensional interchain couplings. MoX3 offers a unique platform for exploring quantum magnetism and magnetic excitations at the atomic chain limit, as these materials combine a 1D van der Waals motif, spin chain behavior, and classical interchain order.

cond-mat.str-el↗

Strong Temperature Dependence of Thermal Conductivity in High-Purity Cubic Boron Arsenide

Materials with high thermal conductivity are needed to conduct heat away from hot spots in high power electronics and optoelectronic devices. Cubic boron arsenide (c-BAs) has a high thermal conductivity due to its special phonon dispersion relation. Previous experimental studies of c-BAs report a room-temperature thermal conductivity between 1000 and 1300 W m-1 K-1. We synthesized high purity isotopically enriched c-BAs single crystals with room-temperature thermal conductivity of around 1500 W m-1 K-1. Using time-domain thermoreflectance (TDTR), we measured thermal conductivity and found a 1/T2 temperature dependence between 300 K and 600 K - slightly stronger than predictions from state-of-the-art theoretical models. Brillouin and Raman scattering revealed minimal changes in phonon frequencies over the same temperature range, suggesting that the observed 1/T2 dependence is not caused by temperature dependent changes in phonon dispersion. To probe defect densities in the BAs crystals we studied, we conducted transient reflectivity microscopy (TRM) measurements of absorption at sub-bandgap photon energies. We observe a correlation between TRM signal intensity and thermal conductivity. Notably, samples with thermal conductivity near 1500 W m-1 K-1 still exhibited nonzero TRM signals, suggesting the presence of defects despite the high thermal conductivity.

cond-mat.mtrl-sci↗

Acoustic Phonon Characteristics of Gallium Oxide Single Crystals Investigated with Brillouin-Mandelstam Light Scattering Spectroscopy

We report an investigation of the bulk and surface acoustic phonons in gallium oxide ultra-wide bandgap single crystals along various crystallographic directions using Brillouin-Mandelstam spectroscopy. Pronounced anisotropy in the acoustic phonon dispersion and velocities was observed across different crystal orientations. The measured average acoustic phonon velocities for the crystallographic directions of interest are 5,250 m/s and 4,990 m/s. The surface acoustic phonons propagate approximately twice as slowly as the bulk acoustic phonons. Our results suggest that the anisotropy of heat conduction in gallium oxide results from the difference in phonon velocities rather than the phonon lifetime. The obtained information for bulk and surface acoustic phonons can be used for developing accurate theoretical models of phonon scattering and optimization of thermal and electrical transport in this technologically important ultra-wide bandgap semiconductor.

cond-mat.mtrl-sci↗

First-principles study of structural, electronic and optical properties of non-toxic RbBaX$_3$ (X = F, Cl, Br, I) perovskites under hydrostatic pressure

We have investigated the structural, mechanical, electronic and optical properties of Rb-based cubic perovskite RbBaX$_3$ (X = F, Cl, Br, I) under hydrostatic pressure, using first-principle density functional theory (DFT). All RbBaX$_3$ perovskites exhibit thermodynamic and mechanical stability at ambient pressure. RbBaF$_3$ remains structurally stable across all examined pressures, while RbBaCl$_3$, RbBaBr$_3$, and RbBaI$_3$ maintain mechanical stability up to 60, 60, and 40 GPa, respectively. These materials are ductile even at elevated pressure. RbBaF$_3$ has a direct bandgap of 4.80 eV while other compositions exhibit indirect band gaps of 4.37, 3.73, and 3.24 eV with halide atoms of Cl, Br, and I, respectively. Under elevated hydrostatic pressure, only RbBaCl$_3$ and RbBaI$_3$ exhibit an indirect-to direct band transition while others preserve their nature of band gap. Our results show that spin-orbit coupling significantly affects only the valance bands of larger-sized halides (Cl, Br, I). With hybrid functional (HSE) correction, the band gaps of these four materials increase to 6.7, 5.6, 4.8 and 4.4 eV, respectively, but the nature of direct/indirect band transition remains unchanged. Orbital-decomposed partial density of states calculation reveals that the halogen p-orbitals dominate the valence band near the Fermi level, while Rb 5s-orbital affects the conduction band minima the most. Investigation of the optical properties reveals wide-band absorption, low electron loss, moderate reflectivity and lower refractive index in the UV to deep-UV range. The strength and range of absorption increases significantly with hydrostatic pressure, suggesting that RbBaX$_3$ perovskites are promising candidates for tunable UV-absorbing optoelectronic devices.

cond-mat.mtrl-sci↗

Acoustic and Optical Phonon Frequencies and Acoustic Phonon Velocities in Silicon-Doped Aluminum Nitride Thin Films

We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metalorganic chemical vapor deposition on sapphire substrates. The Brillouin - Mandelstam and Raman light scattering spectroscopies were used to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The optical phonon frequencies reveal non-monotonic changes, reflective of the variations in the thin-film strain and dislocation densities with the addition of Si dopant atoms. The acoustic phonon velocity decreases monotonically with increasing Si dopant concentration, reducing by ~300 m/s at the doping level of 3 x 10^19 1/cm3. Knowledge of the acoustic phonon velocities can be used to optimize ultra-wide bandgap semiconductor heterostructures and minimize the thermal boundary resistance of high-power devices.

cond-mat.mtrl-sci↗

Solution-Processed Inks with Fillers of NbS$_3$ Quasi-One-Dimensional Charge-Density-Wave Material

We report on the solution processing and testing of electronic ink comprised of quasi-one-dimensional NbS$_3$ charge-density-wave fillers. The ink was prepared by liquid-phase exfoliation of NbS$_3$ crystals into high-aspect ratio quasi-1D fillers dispersed in a mixture of isopropyl alcohol and ethylene glycol solution. The results of the electrical measurements of two-terminal electronic test structures printed on silicon substrates reveal resistance anomalies in the temperature range of ~330 K to 370 K. It was found that the changes in the temperature-dependent resistive characteristics of the test structures originate from the charge-density-wave phase transition of individual NbS$_3$ fillers. The latter confirms that the exfoliated NbS$_3$ fillers preserve their intrinsic charge-density-wave quantum condensate states and can undergo phase transitions above room temperature even after chemical exfoliation processes and printing. These results are important for developing "quantum inks" with charge-density-wave fillers for the increased functionality of future solution-processed electronics.

cond-mat.mtrl-sci↗

Acoustic and Optical Phonons in Quasi-Two-Dimensional MPX3 Van der Waals Semiconductors

We report the results of the investigation of the acoustic and optical phonons in quasi-two-dimensional antiferromagnetic semiconductors of the transition metal phosphorus trisulfide family with Mn, Fe, Co, Ni, and Cd as metal atoms. The Brillouin-Mandelstam and Raman light scattering spectroscopies were conducted at room temperature to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The absorption and index of refraction were measured in the visible and infrared ranges using the reflectometry technique. We found an intriguing large variation, over ~28%, in the acoustic phonon group velocities in this group of materials with similar crystal structures. Our data indicate that the full-width-at-half-maximum of the acoustic phonon peaks is strongly affected by the optical properties and the electronic band gap. The acoustic phonon lifetime extracted for some of the materials was correlated with their thermal properties. The obtained results are important for understanding the layered van der Waals semiconductors and for assessing their potential for optoelectronic and spintronic device applications.

cond-mat.mtrl-sci↗

Electronic Noise Spectroscopy of Quasi-2D van der Waals Antiferromagnetic Semiconductors

We investigated low-frequency current fluctuations, i.e. electronic noise, in FePS3 van der Waals, layered antiferromagnetic semiconductor. The noise measurements have been used as noise spectroscopy for advanced materials characterization of the charge carrier dynamics affected by spin ordering and trapping states. Owing to the high resistivity of the material, we conducted measurements on vertical device configuration. The measured noise spectra reveal pronounced Lorentzian peaks of two different origins. One peak is observed only near the Neel temperature and it is attributed to the corresponding magnetic phase transition. The second Lorentzian peak, visible in the entire measured temperature range, has the characteristics of the trap-assisted generation-recombination processes similar to those in conventional semiconductors but shows a clear effect of the spin order reconfiguration near the Neel temperature. The obtained results contribute to understanding the electron and spin dynamics in this type of antiferromagnetic semiconductors and demonstrate the potential of electronic noise spectroscopy for advanced materials characterization.

cond-mat.mtrl-sci↗

Phonon States in NbTe$_4$ and TaTe$_4$ Quasi-One-Dimensional van der Waals Crystals

We report the results of polarization-dependent Raman spectroscopy of phonon states in single-crystalline quasi-one-dimensional NbTe$_4$ and TaTe$_4$ van der Waals materials. The measurements were conducted in the wide temperature range from 80 K to 560 K. Our results show that although both materials have identical crystal structures and symmetries, there is a drastic difference in the intensity of their Raman spectra. While TaTe4 exhibits well-defined peaks through the examined frequency and temperature ranges, NbTe4 reveals extremely weak Raman signatures. The measured spectral positions of the phonon peaks agree with the phonon band structure calculated using the density-functional theory. We offer possible reasons for the in-tensity differences between the two van der Waals materials. Our results provide insights into the phonon properties of NbTe$_4$ and TaTe$_4$ van der Waals materials and indicate the potential of Raman spectroscopy for studying charge-density-wave quantum condensate phases.

cond-mat.mtrl-sci↗

Temperature Dependent Low-Frequency Noise Characteristics of NiO$_x$/Ga$_2$O$_3$ p-n Heterojunction Diodes

We report on the temperature dependence of the low-frequency electronic noise in NiO$_x$/Ga$_2$O$_3$ p-n heterojunction diodes. The noise spectral density is of the 1/f-type near room temperature but shows signatures of Lorentzian components at elevated temperatures and at higher current levels (f is the frequency). We observed an intriguing non-monotonic dependence of the noise on temperature near T = 380$^\circ$ K. The Raman spectroscopy of the device structure suggests material changes, which results in reduced noise above this temperature. The normalized noise spectral density in such diodes was determined to be on the order of 10$^{-14}$ cm$^2$/Hz (f = 10 Hz) at 0.1 A/cm$^2$ current density. In terms of the noise level, NiO$_x$/Ga$_2$O$_3$ p-n diodes occupy an intermediate position among devices of various designs implemented with different ultra-wide-band-gap (UWBG) semiconductors. The obtained results are important for understanding the electronic properties of the UWBG heterojunctions and contribute to the development of noise spectroscopy as the quality assessment tool for new electronic materials and device technologies.

physics.app-ph↗

Optical and Acoustic Phonons in Turbostratic and Cubic Boron Nitride Thin Films on Diamond Substrates

We report an investigation of the bulk optical, bulk acoustic, and surface acoustic phonons in thin films of turbostratic boron nitride (t-BN) and cubic boron nitride (c-BN) grown on B-doped polycrystalline and single-crystalline diamond (001) and (111) substrates. The characteristics of different types of phonons were determined using Raman and Brillouin-Mandelstam light scattering spectroscopies. The atomic structure of the films was determined using high-resolution transmission electron microscopy (HRTEM) and correlated with the Raman and Brillouin-Mandelstam spectroscopy data. The HRTEM analysis revealed that the cubic boron nitride thin films consisted of a mixture of c-BN and t-BN phases, with c-BN being the dominant phase. It was found that while visible Raman spectroscopy provided information for characterizing the t-BN phase, it faced challenges in differentiating the c-BN phase either due to the presence of high-density defects or the overlapping of the Raman features with those from the B-doped diamond substrates. In contrast, Brillouin-Mandelstam spectroscopy clearly distinguishes the bulk longitudinal and surface acoustic phonons of the c-BN thin films grown on diamond substrates. Additionally, the angle-dependent surface Brillouin-Mandelstam scattering data show the peaks associated with the Rayleigh surface acoustic waves, which have higher phase velocities in c-BN films on diamond (111) substrates. These findings provide valuable insights into the phonon characteristics of the c-BN and diamond interfaces and have important implications for the thermal management of electronic devices based on ultra-wide-band-gap materials.

cond-mat.mtrl-sci↗

Conductance Fluctuations and Domain Depinning in Quasi-2D Charge-Density-Wave 1T-TaS$_2$ Thin Films

We investigated the temperature dependence of the conductance fluctuations in thin films of the quasi-two-dimensional 1T-TaS$_2$ van der Waals material. The conductance fluctuations, determined from the derivative current-voltage characteristics of two-terminal 1T-TaS$_2$ devices, appear prominently at the electric fields that correspond to the transitions between various charge-density-wave macroscopic quantum condensate phases and at the onset of the depinning of the charge density wave domains. The depinning threshold field, $E_D$, monotonically increases with decreasing temperature within the nearly commensurate charge-density-wave phase. The $E_D$ value increases with the decreasing 1T-TaS$_2$ film thickness, revealing the surface pinning of the charge density waves. Our analysis suggests that depinning is absent in the commensurate phase. It is induced by the electric field but facilitated by local heating. The measured trends for $E_D$ of the domain depinning are important for understanding the physics of charge density waves in quasi-two-dimensional crystals and for developing electronic devices based on this type of quantum materials.

cond-mat.mes-hall↗

Quantum Composites with the Functionality Defined by the Charge-Density-Wave Phase Transitions

We demonstrate a unique class of advanced materials - quantum composites based on polymers with fillers comprised of a van der Waals quantum material that reveals multiple charge-density-wave quantum condensate phases. Materials that exhibit quantum phenomena are typically crystalline, pure, and have few defects because disorder destroys the coherence of the electrons and phonons, leading to collapses of the quantum states. We succeeded in preserving the macroscopic charge-density-wave phases of filler particles after multiple composite processing steps. The prepared composites manifest strong charge-density-wave phenomena even above room temperature. The dielectric constant experiences more than two orders of magnitude enhancement while the material maintains its electrically insulating properties, opening a venue for advanced applications in energy storage and electronics. The results present a conceptually different approach for engineering the properties of materials, extending the application domain for van der Waals materials.

cond-mat.mtrl-sci↗