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arXiv · 2102.08927

Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Marilena Vivona·Giuseppe Greco·Monia Spera·Patrick Fiorenza·Filippo Giannazzo·Antonino La Magna·Fabrizio Roccaforte
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Abstract

The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse bias. The forward current-voltage characterization of Schottky diodes showed that the predominant current transport is a thermionic-field emission mechanism. On the other hand, the reverse bias characteristics could not be described by a unique mechanism. In fact, under moderate reverse bias, implantation-induced damage is responsible for the temperature increase of the leakage current, while a pure field emission mechanism is approached with bias increasing. The potential application of metal/4H-SiC contacts on heavily doped layers in real devices are discussed.

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Marilena Vivona, Giuseppe Greco, Monia Spera, Patrick Fiorenza, Filippo Giannazzo, Antonino La Magna, Fabrizio Roccaforte. 2021-02-17. Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC. https://doi.org/10.1088/1361-6463/ac13f3

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