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arXiv · 2103.15944

Coherent Hopping Transport and Giant Negative Magnetoresistance in Epitaxial CsSnBr$_{3}$

Liangji Zhang·Isaac King·Kostyantyn Nasyedkin·Pei Chen·Brian Skinner·Richard R. Lunt·Johannes Pollanen
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Abstract

Single-crystal inorganic halide perovskites are attracting interest for quantum device applications. Here we present low-temperature quantum magnetotransport measurements on thin film devices of epitaxial single-crystal CsSnBr$_{3}$, which exhibit two-dimensional Mott variable range hopping (VRH) and giant negative magnetoresistance. These findings are described by a model for quantum interference between different directed hopping paths and we extract the temperature-dependent hopping length of charge carriers, their localization length, and a lower bound for their phase coherence length of ~100 nm at low temperatures. These observations demonstrate that epitaxial halide perovskite devices are emerging as a material class for low-dimensional quantum coherent transport devices.

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Liangji Zhang, Isaac King, Kostyantyn Nasyedkin, Pei Chen, Brian Skinner, Richard R. Lunt, Johannes Pollanen. 2021-03-29. Coherent Hopping Transport and Giant Negative Magnetoresistance in Epitaxial CsSnBr$_{3}$. https://doi.org/10.1021/acsaelm.1c00409

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