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arXiv · 2104.03621

Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

A. Hertel·L. O. Andersen·D. M. T. van Zanten·M. Eichinger·P. Scarlino·S. Yadav·J. Karthik·S. Gronin·G. C. Gardner·M. J. Manfra·C. M. Marcus·K. D. Petersson
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Abstract

We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high resistivity silicon substrate. We characterized the electrical properties of this material system at millikelvin temperatures and observed a high average field-effect mobility of $\mu \approx 3200\,\mathrm{cm^2/Vs}$ for the InAs channel, and a hard induced superconducting gap. Josephson junctions exhibited a high interface transmission, $\mathcal{T} \approx 0.75 $, gate voltage tunable switching current with a product of critical current and normal state resistance, $I_{\mathrm{C}}R_{\mathrm{N}} \approx 83\,\mathrm{\mu V}$, and signatures of multiple Andreev reflections. These results pave the way for scalable and high coherent gate voltage tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.

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A. Hertel, L. O. Andersen, D. M. T. van Zanten, M. Eichinger, P. Scarlino, S. Yadav, J. Karthik, S. Gronin, G. C. Gardner, M. J. Manfra, C. M. Marcus, K. D. Petersson. 2021-04-08. Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon. https://doi.org/10.1103/physrevapplied.16.044015

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