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K. D. Petersson

Publications and source records attributed to K. D. Petersson.

At least 19 recordsLinked to original sources

Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer layers. We show that low loss superconducting resonators with an internal quality of $2\times 10^5$ can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, $T_{1}\approx 700\,\mathrm{ns}$, and dephasing times, $T_2^{\ast}\approx 20\,\mathrm{ns}$ and $T_{\mathrm{2,echo}} \approx 1.3\,\mathrm{μs}$. Further, we infer a high junction transparency of $0.4 - 0.9$ from an analysis of the qubit anharmonicity.

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Parity switching in a full-shell superconductor-semiconductor nanowire qubit

The rate of charge-parity switching in a full-shell superconductor-semiconductor nanowire qubit is measured by directly monitoring the dispersive shift of a readout resonator. At zero magnetic field, the measured switching time scale $T_P$ is on the order of 100 ms. Two-tone spectroscopy data post-selected on charge-parity is demonstrated. With increasing temperature or magnetic field, TP is at first constant, then exponentially suppressed, consistent with a model that includes both non-equilibrium and thermally activated quasiparticles. As TP is suppressed, qubit lifetime T1 also decreases. The long $T_P\sim 0.1$ s at zero field is promising for future development of qubits based on hybrid nanowires.

cond-mat.mes-hall

Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high resistivity silicon substrate. We characterized the electrical properties of this material system at millikelvin temperatures and observed a high average field-effect mobility of $μ\approx 3200\,\mathrm{cm^2/Vs}$ for the InAs channel, and a hard induced superconducting gap. Josephson junctions exhibited a high interface transmission, $\mathcal{T} \approx 0.75 $, gate voltage tunable switching current with a product of critical current and normal state resistance, $I_{\mathrm{C}}R_{\mathrm{N}} \approx 83\,\mathrm{μV}$, and signatures of multiple Andreev reflections. These results pave the way for scalable and high coherent gate voltage tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.

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Magnetic-Field-Compatible Superconducting Transmon Qubit

We present a hybrid semiconductor-based superconducting qubit device which remains coherent at magnetic fields up to 1 T. The qubit transition frequency exhibits periodic oscillations with magnetic field, consistent with interference effects due to the magnetic flux threading the cross section of the proximitized semiconductor nanowire junction. As induced superconductivity revives, additional coherent modes emerge at high magnetic fields, which we attribute to the interaction of the qubit and low-energy Andreev states.

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Andreev Modes from Phase Winding in a Full-shell Nanowire-based Transmon

We investigate transmon qubits made from semiconductor nanowires with a fully surrounding superconducting shell. In the regime of reentrant superconductivity associated with the destructive Little-Parks effect, numerous coherent transitions are observed in the first reentrant lobe, where the shell carries 2π winding of superconducting phase, and are absent in the zeroth lobe. As junction density was increased by gate voltage, qubit coherence was suppressed then lost in the first lobe. These observations and numerical simulations highlight the role of winding-induced Andreev states in the junction.

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A Parity-Protected Superconductor-Semiconductor Qubit

Coherence of superconducting qubits can be improved by implementing designs that protect the parity of Cooper pairs on superconducting islands. Here, we introduce a parity-protected qubit based on voltage-controlled semiconductor nanowire Josephson junctions, taking advantage of the higher harmonic content in the energy-phase relation of few-channel junctions. A symmetric interferometer formed by two such junctions, gate-tuned into balance and frustrated by a half-quantum of applied flux, yields a cos(2ϕ) Josephson element, reflecting coherent transport of pairs of Cooper pairs. We demonstrate that relaxation of the qubit can be suppressed tenfold by tuning into the protected regime.

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Suppressed Charge Dispersion via Resonant Tunneling in a Single-Channel Transmon

We demonstrate strong suppression of charge dispersion in a semiconductor-based transmon qubit across Josephson resonances associated with a quantum dot in the junction. On resonance, dispersion is drastically reduced compared to conventional transmons with corresponding Josephson and charging energies. We develop a model of qubit dispersion for a single-channel resonance, which is in quantitative agreement with experimental data.

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Controlled DC Monitoring of a Superconducting Qubit

Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by operating a semiconductor region of the device as a field-effect transistor (FET). Here, we exploit this feature to compare in the same device characteristics of the qubit, such as frequency and relaxation time, with related transport properties such as critical supercurrent and normal-state resistance. Gradually opening the FET to the monitoring circuit allows the influence of weak-to-strong DC monitoring of a live qubit to be measured. A model of this influence yields excellent agreement with experiment, demonstrating a relaxation rate mediated by a gate-controlled environmental coupling.

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Voltage-Controlled Superconducting Quantum Bus

We demonstrate the ability of an epitaxial semiconductor-superconductor nanowire to serve as a field-effect switch to tune a superconducting cavity. Two superconducting gatemon qubits are coupled to the cavity, which acts as a quantum bus. Using a gate voltage to control the superconducting switch yields up to a factor of 8 change in qubit-qubit coupling between the on and off states without detrimental effect on qubit coherence. High-bandwidth operation of the coupling switch on nanosecond timescales degrades qubit coherence.

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Anharmonicity of a Gatemon Qubit with a Few-Mode Josephson Junction

Coherent operation of gate-voltage-controlled hybrid transmon qubits (gatemons) based on semiconductor nanowires was recently demonstrated. Here we experimentally investigate the anharmonicity in epitaxial InAs-Al Josephson junctions, a key parameter for their use as a qubit. Anharmonicity is found to be reduced by roughly a factor of two compared to conventional metallic junctions, and dependent on gate voltage. Experimental results are consistent with a theoretical model, indicating that Josephson coupling is mediated by a small number of highly transmitting modes in the semiconductor junction.

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Gatemon Benchmarking and Two-Qubit Operation

Recent experiments have demonstrated superconducting transmon qubits with semiconductor nanowire Josephson junctions. These hybrid gatemon qubits utilize field effect tunability characteristic for semiconductors to allow complete qubit control using gate voltages, potentially a technological advantage over conventional flux-controlled transmons. Here, we present experiments with a two-qubit gatemon circuit. We characterize qubit coherence and stability and use randomized benchmarking to demonstrate single-qubit gate errors below 0.7% for all gates, including voltage-controlled $Z$ rotations. We show coherent capacitive coupling between two gatemons and coherent swap operations. Finally, we perform a two-qubit controlled-phase gate with an estimated fidelity of 91%, demonstrating the potential of gatemon qubits for building scalable quantum processors.

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A Semiconductor Nanowire-Based Superconducting Qubit

We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmon-like device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (0.8 μs) and dephasing times (1 μs), exceeding gate operation times by two orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces crosstalk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.

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Photon Emission from a Cavity-Coupled Double Quantum Dot

We study a voltage biased InAs double quantum dot (DQD) that is coupled to a superconducting transmission line resonator. Inelastic tunneling in the DQD is mediated by electron phonon coupling and coupling to the cavity mode. We show that electronic transport through the DQD leads to photon emission from the cavity at a rate of 10 MHz. With a small cavity drive field, we observe a gain of up to 15 in the cavity transmission. Our results are analyzed in the context of existing theoretical models and suggest that it may be necessary to account for inelastic tunneling processes that proceed via simultaneous emission of a phonon and a photon.

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Cavity-Mediated Entanglement Generation Via Landau-Zener Interferometry

We demonstrate quantum control and entanglement generation using a Landau-Zener beam splitter formed by coupling two transmon qubits to a superconducting cavity. Single passage through the cavity-mediated qubit-qubit avoided crossing provides a direct test of the Landau-Zener transition formula. Consecutive sweeps result in Landau-Zener-Stuckelberg interference patterns, with a visibility that can be sensitively tuned by adjusting the level velocity through both the non-adiabatic and adiabatic regimes. Two-qubit state tomography indicates that a Bell state can be generated via a single passage, with a fidelity of 78% limited by qubit relaxation.

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A Radio Frequency Charge Parity Meter

We demonstrate a total charge parity measurement by detecting the radio frequency signal that is reflected by a lumped element resonator coupled to a single InAs nanowire double quantum dot. The high frequency response of the circuit is used to probe the effects of the Pauli exclusion principle at interdot charge transitions. Even parity charge transitions show a striking magnetic field dependence that is due to a singlet-triplet transition, while odd parity transitions are relatively insensitive to magnetic field. The measured response agrees well with cavity input-output theory, allowing accurate measurements of the interdot tunnel coupling and the resonator-charge coupling rate g_c/2pi ~ 17 MHz.

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Circuit Quantum Electrodynamics with a Spin Qubit

Circuit quantum electrodynamics allows spatially separated superconducting qubits to interact via a "quantum bus", enabling two-qubit entanglement and the implementation of simple quantum algorithms. We combine the circuit quantum electrodynamics architecture with spin qubits by coupling an InAs nanowire double quantum dot to a superconducting cavity. We drive single spin rotations using electric dipole spin resonance and demonstrate that photons trapped in the cavity are sensitive to single spin dynamics. The hybrid quantum system allows measurements of the spin lifetime and the observation of coherent spin rotations. Our results demonstrate that a spin-cavity coupling strength of 1 MHz is feasible.

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Radio frequency charge sensing in InAs nanowire double quantum dots

We demonstrate charge sensing of an InAs nanowire double quantum dot (DQD) coupled to a radio frequency (rf) circuit. We measure the rf signal reflected by the resonator using homodyne detection. Clear single dot and DQD behavior are observed in the resonator response. rf-reflectometry allows measurements of the DQD charge stability diagram in the few-electron regime even when the dc current through the device is too small to be measured. For a signal-to-noise ratio of one, we estimate a minimum charge detection time of 350 microseconds at interdot charge transitions and 9 microseconds for charge transitions with the leads.

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Nonadiabatic quantum control of a semiconductor charge qubit

We demonstrate multipulse quantum control of a single electron charge qubit. The qubit is manipulated by applying nonadiabatic voltage pulses to a surface depletion gate and readout is achieved using a quantum point contact charge sensor. We observe Ramsey fringes in the excited state occupation in response to a pi/2 - pi/2 pulse sequence and extract T2* ~ 60 ps away from the charge degeneracy point. Simulations suggest these results may be extended to implement a charge-echo by reducing the interdot tunnel coupling and pulse rise time, thereby increasing the nonadiabaticity of the pulses.

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