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arXiv · 2104.04877

Broadband Photocurrent Spectroscopy and Temperature Dependence of Band-gap of Few-Layer Indium Selenide

Prasanna D. Patil·Milinda Wasala·Sujoy Ghosh·Sidong Lei·Saikat Talapatra
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Abstract

Understanding broadband photoconductive behaviour in two dimensional layered materials are important in order to utilize them for a variety of opto-electronic applications. Here we present our results of photocurrent spectroscopy measurements performed on few layer Indium Selenide (InSe) flakes. Temperature (T) dependent (40 K < T < 300 K) photocurrent spectroscopy was performed in order to estimate the band-gap energies E_g(T) of InSe at various temperatures. Our measurements indicate that room temperature E_g value for InSe flake was ~ 1.254 eV, which increased to a value of ~ 1.275 eV at low temperatures. The estimation of Debye temperatures by analysing the observed experimental variation of E_g as a function of T using several theoretical models is presented and discussed.

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Prasanna D. Patil, Milinda Wasala, Sujoy Ghosh, Sidong Lei, Saikat Talapatra. 2021-04-10. Broadband Photocurrent Spectroscopy and Temperature Dependence of Band-gap of Few-Layer Indium Selenide. https://doi.org/10.1007/s42247-021-00248-9

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