arXiv subjects

Sidong Lei

Publications and source records attributed to Sidong Lei.

8 recordsLinked to original sources

arXiv2026

Modulating Surface Acoustic Wave Generation through Superconductivity

Surface acoustic waves (SAWs), with their five orders-of-magnitude slower propagation velocity, allow for considerably shorter wavelengths at the same frequency compared to electromagnetic waves. The short wavelengths allow for device miniaturization and on-chip integration. The generic design of these devices involve piezoelectric substrates with comblike arrays of Al or Au electrodes known as interdigitated transducers deposited on the surface. However, Al and Au both have shortcomings at the cryogenic temperatures required for quantum applications, namely the formation of two-level systems and the lack of superconductivity perpetuating Ohmic losses, respectively. In this work, SAWs are generated in the high-MHz to low-GHz range using niobium nitride (NbN) interdigitated transducers (IDTs) and Bragg reflectors. We demonstrate the fabrication of acoustic devices through photolithography and reactive ion etching (RIE). The sharp transition between superconducting and normal states and the corresponding change in SAW transmission allows for fine control of the 'on' (superconducting) and 'off' (normal) states of NbN, with a Δ_T = K separating the transmission minimum and maximum. We demonstrate a 16x difference in transmission between the 'on' and 'off' states of the device. The SAW transmission behavior mirrors the change in resistance of NbN at its Tc. These findings open up new possibilities for the integration of NbN SAW resonators into existing quantum architectures based on NbN and a method for adjusting transmission properties independent of applied voltage.

cond-mat.mes-hall↗

arXiv2026

Universal Latent Homeomorphic Manifolds: A Framework for Cross-Domain Representation Unification

We present the Universal Latent Homeomorphic Manifold (ULHM), a framework that unifies semantic representations (e.g., human descriptions, diagnostic labels) and observation-driven machine representations (e.g., pixel intensities, sensor readings) into a single latent structure. Despite originating from fundamentally different pathways, both modalities capture the same underlying reality. We establish \emph{homeomorphism}, a continuous bijection preserving topological structure, as the mathematical criterion for determining when latent manifolds induced by different semantic-observation pairs can be rigorously unified. This criterion provides theoretical guarantees for three critical applications: (1) semantic-guided sparse recovery from incomplete observations, (2) cross-domain transfer learning with verified structural compatibility, and (3) zero-shot compositional learning via valid transfer from semantic to observation space. Our framework learns continuous manifold-to-manifold transformations through conditional variational inference, avoiding brittle point-to-point mappings. We develop practical verification algorithms, including trust, continuity, and Wasserstein distance metrics, that empirically validate homeomorphic structure from finite samples. Experiments demonstrate: (1) sparse image recovery from 5% of CelebA pixels and MNIST digit reconstruction at multiple sparsity levels, (2) cross-domain classifier transfer achieving 86.73% accuracy from MNIST to Fashion-MNIST without retraining, and (3) zero-shot classification on unseen classes achieving 78.76% on CIFAR-10. Critically, the homeomorphism criterion determines when different semantic-observation pairs share compatible latent structure, enabling principled unification into universal representations and providing a mathematical foundation for decomposing general foundation models into domain-specific components.

eess.IV↗

arXiv2024

Your Clean Graphene is Still Not Clean

Efforts aimed at scaling fabrication processes to the level of single atoms, dubbed atom-by-atom fabrication or atomic fabrication, invariably encounter the obstacle of atomic scale cleanliness. When considering atomic fabrication, cleanliness of the base material and purity of the source reservoir from which atomic structures will be built are invariable constraints imposed by laws of physics and chemistry. As obvious as such statements may be, and regardless of the inevitable consequences for successful atomic fabrication, there is a poignant lack of understanding of the "dirt" (contamination/impurities). Here, we examine hydrocarbon contamination on graphene. Graphene has formed the base substrate for many e-beam-based atomic fabrication studies and many strategies for cleaning graphene have been presented in the literature. One popular method is heating to high temperatures (>500 °C). It is usually inferred that volatile hydrocarbons evaporate into the microscope vacuum system leaving behind pristine graphene. Here, we show through direct image intensity analysis that what appears to be clean graphene can be coated with a thin layer of dynamically diffusing hydrocarbons. This result holds significant implications for approaches to e-beam based atomic fabrication, updates the conceptual model of e-beam induced hydrocarbon deposition, and may extend to hot surfaces generally.

cond-mat.mtrl-sci↗

arXiv2024

Momentum Matching for 2D-3D Heterogeneous Ohmic van der Waals Contact

Construction of ohmic contact is a long-standing challenge encountered by two-dimensional (2D) device fabrication and integration. van der Waals contacts, as a new solution for 2D contact construction, can effectively eliminate issues, such as Fermi-level pining and formation of Schottky barrier. Nevertheless, current research primarily considers energy band alignment, while ignoring the transverse momentum conservation of charge carriers during the quantum tunneling across the van der Waals contacts. In this study, by comparing the IV characteristics and tunneling spectra of graphene-silicon tunneling junctions with various interfacial transverse momentum distribution, we demonstrate the importance of charge carrier momentum in constructing high-performance 2D contact. Further, by conditioning the van der Waals contacts and minimizing the momentum mismatch, we successfully enhanced the quantum tunneling current with more than three orders of magnitude and obtain ohmic-like contact. Our study provide and effective method for the construction of direction 2D-3D contact with low resistance and can potentially benefit the heterogeneous of integration of 2D materials in post-CMOS architectures.

physics.app-ph↗

arXiv2021

Broadband Photocurrent Spectroscopy and Temperature Dependence of Band-gap of Few-Layer Indium Selenide

Understanding broadband photoconductive behaviour in two dimensional layered materials are important in order to utilize them for a variety of opto-electronic applications. Here we present our results of photocurrent spectroscopy measurements performed on few layer Indium Selenide (InSe) flakes. Temperature (T) dependent (40 K < T < 300 K) photocurrent spectroscopy was performed in order to estimate the band-gap energies E_g(T) of InSe at various temperatures. Our measurements indicate that room temperature E_g value for InSe flake was ~ 1.254 eV, which increased to a value of ~ 1.275 eV at low temperatures. The estimation of Debye temperatures by analysing the observed experimental variation of E_g as a function of T using several theoretical models is presented and discussed.

cond-mat.mes-hall↗

arXiv2021

Role of Layer Thickness and Field-Effect Mobility on Photoresponsivity of Indium Selenide (InSe) Based Phototransistors

Understanding and optimizing the properties of photoactive two-dimensional (2D) Van der Waals solids are crucial for developing optoelectronics applications. Here we present a detailed investigation of layer dependent photoconductive behavior of InSe based field-effect transistors (FETs). InSe based FETs with five different channel thickness (t, 20 nm < t < 100 nm) were investigated with a continuous laser source of λ = 658 nm (1.88 eV) over a wide range of illumination power of 22.8 nW < P < 1.29 μW. All the devices studied, showed signatures of photogating, however, our investigations suggest that the photoresponsivities are strongly dependent on the thickness of the conductive channel. A correlation between the field-effect mobility (μFE) values (as a function of channel thickness, t) and photoresponsivity (R) indicates that in general R increases with increasing μFE (decreasing t) and vice versa. The maximum responsivity of ~ 7.84 A/W and ~ 0.59 A/W was obtained for the device with t = 20 nm and t = 100 nm respectively. These values could substantially increase under the application of a gate voltage. The structure-property correlation-based studies presented here indicate the possibility of tuning the optical properties of InSe based photo-FETs for a variety of applications related to photodetector and/or active layers in solar cells.

physics.app-ph↗

arXiv2014

Spatially Resolved Photo-Excited Charge Carrier Dynamics in Phase-Engineered Monolayer MoS2

A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. Here, we investigate the transport properties of chemical vapor deposition (CVD) grown monolayer molybdenum disulfide (MoS2) under photo-excitation using correlated scanning photocurrent microscopy and photoluminescence imaging. We examined the effect of local phase transformation underneath the metal electrodes on the generation of photocurrent across the channel length with diffraction-limited spatial resolution. While maximum photocurrent generation occurs at the Schottky contacts of semiconducting (2H-phase) MoS2, after the metallic phase transformation (1T-phase), the photocurrent peak is observed towards the center of the device channel, suggesting a strong reduction of native Schottky barriers. Analysis using the bias and position dependence of the photocurrent indicates that the Schottky barrier heights are few meV for 1T- and ~200 meV for 2H-contacted devices. We also demonstrate that a reduction of native Schottky barriers in a 1T device enhances the photo responsivity by more than one order of magnitude, a crucial parameter in achieving high performance optoelectronic devices. The obtained results pave a pathway for the fundamental understanding of intrinsic optoelectronic properties of atomically thin TMDs where Ohmic contacts are necessary for achieving high efficiency devices with low power consumption.

cond-mat.mtrl-sci↗

arXiv2013

Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleation-controlled strategy is established to systematically promote the formation of large-area single- and few-layered films. The atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulfide atomic layers are examined and first-principles calculations are applied to investigate their energy landscape. The electrical properties of the atomic layers are examined and the role of grain boundaries is evaluated. The uniformity in thickness, large grain sizes, and excellent electrical performance of these materials signify the high quality and scalable synthesis of the molybdenum disulfide atomic layers.

cond-mat.mtrl-sci↗