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arXiv · 2105.02753

Susceptibility of Trapped-Ion Qubits to Low-Dose Radiation Sources

Jiafeng Cui·A. J. Rasmusson·Marissa D'Onofrio·Yuanheng Xie·Evangeline Wolanski·Philip Richerme
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Abstract

We experimentally study the real-time susceptibility of trapped-ion quantum systems to small doses of ionizing radiation. We expose an ion-trap apparatus to a variety of $\alpha$, $\beta$, and $\gamma$ sources and measure the resulting changes in trapped-ion qubit lifetimes, coherence times, gate fidelities, and motional heating rates. We found no quantifiable degradation of ion trap performance in the presence of low-dose radiation sources for any of the measurements performed. This finding is encouraging for the long-term prospects of using ion-based quantum information systems in extreme environments, indicating that much larger doses may be required to induce errors in trapped-ion quantum processors.

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Jiafeng Cui, A. J. Rasmusson, Marissa D'Onofrio, Yuanheng Xie, Evangeline Wolanski, Philip Richerme. 2021-05-06. Susceptibility of Trapped-Ion Qubits to Low-Dose Radiation Sources. https://doi.org/10.1088/1361-6455/ac076c

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