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arXiv · 2105.04209

The M-center in 4H-SiC is a carbon self-interstitial

J. Coutinho·J. D. Gouveia·T. Makino·T. Ohshima·Ž. Pastuović·L. Bakrač·T. Brodar·I. Capan
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Abstract

The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M-center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil its real importance for almost two decades. Using advanced first-principles calculations and junction spectroscopy, we demonstrate that the properties of M, including bistability, annealing, reconfiguration kinetics, and electronic levels, match those of the carbon self-interstitial.

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J. Coutinho, J. D. Gouveia, T. Makino, T. Ohshima, Ž. Pastuović, L. Bakrač, T. Brodar, I. Capan. 2021-05-10. The M-center in 4H-SiC is a carbon self-interstitial. https://doi.org/10.1103/physrevb.103.l180102

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