arXiv subjects

T. Makino

Publications and source records attributed to T. Makino.

At least 19 recordsLinked to original sources

arXiv2023

Temperature dependent optical properties of $\varepsilon$-Ga$_2$O$_3$ thin films

We determined the complex dielectric functions of $\varepsilon$-Ga$_2$O$_3$ using optical transmittance and reflectance spectroscopies at temperatures from 10 K to room temperature. The measured dielectric-function spectra reveal distinct structures at a bandgap energy. We fitted a model dielectric function based on the electronic energy-band structure to these experimental data. We analyzed the temperature dependence of the band-gap with a model based on phonon dispersion effects. One could explain it in terms of phonon-related parameters such as the optical phonon temperature. We compare phonon-related properties of $\varepsilon$-Ga$_2$O$_3$ with those of a large variety of element and binary semiconductors.

cond-mat.mtrl-sci↗

arXiv2023

Optical Properties of LiNbO$_2$ thin films

The complex dielectric functions of LiNbO$_2$ were determined using optical transmittance and reflectance spectroscopies at room temperature. The measured dielectric function spectra reveal distinct structures at several bandgap energies. The bandgaps (exciton resonances) in the spectrum were observed at ca. 2.3, 3.2, 3.9, and 5.1 eV, respectively. These experimental data have been fit using a model dielectric function based on the electronic energy-band structure near critical points plus excitonic effects. The features of measured dielectric functions are, to some extent, reproduced quantitatively by an ab-initio calculation including the interaction effects between electrons and holes.

cond-mat.mtrl-sci↗

arXiv2023

Photoreflectance spectroscopy of BiOCl epitaxial thin films

We have observed a new optical transition in the photoreflectance spectra of indirect-gap BiOCl thin films, which were grown on SrTiO$_3$ substrates. The position of this transition is close in energy to its bulk critical point energy. Moreover, these are significantly lower than a higher-lying direct-type critical point from an energetic point of view. The spectral line shape analysis for our observed signal suggests the presence of an excitonic effect of this compound. We determined its dependence of the optical anomaly on temperature ranging from 80 K to room temperature. We adopted the Varshni model for this analysis. At last, we compared phononic properties of BiOCl with those of an element and binary semiconductors.

cond-mat.mtrl-sci↗

arXiv2022

Low-frequency quantum sensing

Exquisite sensitivities are a prominent advantage of quantum sensors. Ramsey sequences allow precise measurement of direct current fields, while Hahn-echo-like sequences measure alternating current fields. However, the latter are restrained for use with high-frequency fields (above approximately $1$ kHz) due to finite coherence times, leaving less-sensitive noncoherent methods for the low-frequency range. In this paper, we propose to bridge the gap with a fitting-based algorithm with a frequency-independent sensitivity to coherently measure low-frequency fields. As the algorithm benefits from coherence-based measurements, its demonstration with a single nitrogen-vacancy center gives a sensitivity of $9.4$ nT Hz$^{-0.5}$ for frequencies below about $0.6$ kHz down to near-constant fields. To inspect the potential in various scenarios, we apply the algorithm at a background field of tens of nTs, and we measure low-frequency signals via synchronization.

quant-ph↗

arXiv2021

The M-center in 4H-SiC is a carbon self-interstitial

The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M-center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil its real importance for almost two decades. Using advanced first-principles calculations and junction spectroscopy, we demonstrate that the properties of M, including bistability, annealing, reconfiguration kinetics, and electronic levels, match those of the carbon self-interstitial.

cond-mat.mtrl-sci↗

arXiv2021

Shallow NV centers augmented by exploiting n-type diamond

Creation of nitrogen-vacancy (NV) centers at the nanoscale surface region in diamond, while retaining their excellent spin and optical properties, is essential for applications in quantum technology. Here, we demonstrate the extension of the spin-coherence time ($\it{T}$${_2}$), the stabilization of the charge state, and an improvement of the creation yield of NV centers formed by the ion-implantation technique at a depth of $\sim$15 nm in phosphorus-doped n-type diamond. The longest $\it{T}$${_2}$ of about 580 $μ$s of a shallow NV center approaches the one in bulk diamond limited by the nuclear spins of natural abundant $^{13}$C. The averaged $\it{T}$${_2}$ in n-type diamond is over 1.7 times longer than that in pure non-doped diamond. Moreover, the stabilization of the charge state and the more than twofold improvement of the creation yield are confirmed. The enhancements for the shallow NV centers in an n-type diamond-semiconductor are significant for future integrated quantum devices.

cond-mat.mtrl-sci↗

arXiv2017

Single crystal diamond membranes for nanoelectronics

Single crystal, nanoscale diamond membranes are highly sought after for a variety of applications including nanophotonics, nanoelectronics and quantum information science. However, so far, the availability of conductive diamond membranes remained an unreachable goal. In this work we present a complete nanofabrication methodology for engineering high aspect ratio, electrically active single crystal diamond membranes. The membranes have large lateral directions, exceeding 500x500 um2 and are only several hundreds of nanometers thick. We further realize vertical single crystal p-n junctions, made from the diamond membranes that exhibit onset voltages of ~ 10V and a current of several mA. Moreover, we deterministically introduce optically active color centers into the membranes, and demonstrate for the first time a single crystal nanoscale diamond LED. The robust and scalable approach to engineer the electrically active single crystal diamond membranes, offers new pathways for advanced nanophotonics, nanoelectronics and optomechanics devices employing diamond.

physics.app-ph↗

arXiv2014

Perfect selective alignment of nitrogen-vacancy center in diamond

Nitrogen-vacancy (NV) centers in diamond have attracted significant interest because of their excellent spin and optical characteristics for quantum information and metrology. To take advantage of the characteristics, the precise control of the orientation of the N-V axis in the lattice is essential. Here we show that the orientation of more than 99 % of the NV centers can be aligned along the [111]-axis by CVD homoepitaxial growth on (111)-substrates. We also discuss about mechanisms of the alignment. Our result enables a fourfold improvement in magnetic-field sensitivity and opens new avenues to the optimum design of NV center devices.

cond-mat.mes-hall↗

arXiv2013

Magneto-photoluminescence of charged excitons from MgZnO/ZnO heterojunctions

We report on the photoluminescence (PL) properties of MgZnO/ZnO heterojunctions grown by plasma-assisted molecular-beam epitaxy. Influence of the applied magnetic field (B) on the radiative recombination of the two-dimensional electron gas (2DEG) is investigated up to 54 T. An increase in magnetic field in the range of B <= 20 T results in a redshift in the PL. Abrupt lineshape changes in the PL spectra are observed at higher magnetic fields, in correlation with the integer quantum Hall states. We attempt to interpret these features using the conventional model for the 2DEG-related PL based on the transition between the 2DEG and a hole as well as a model taking a bound state effect into account, i.e., a charged exciton. The comparison about the adequateness of these models was made, being in favor of the charged exciton model.

cond-mat.mtrl-sci↗

arXiv2012

Precise calibration of Mg concentration in MgxZn1-xO thin films grown on ZnO substrates

The growth techniques for MgxZn1-xO thin films have advanced at a rapid pace in recent years, enabling the application of this material to a wide range of optical and electrical applications. In designing structures and optimizing device performances, it is crucial that the Mg content of the alloy be controllable and precisely determined. In this study, we have established laboratory-based methods to determine the Mg content of MgxZn1-xO thin films grown on ZnO substrates, ranging from the solubility limit of x ~ 0.4 to the dilute limit of x < 0.01. For the absolute determination of Mg content, Rutherford backscattering spectroscopy is used for the high Mg region above x = 0.14, while secondary ion mass spectroscopy is employed to quantify low Mg content. As a lab-based method to determine the Mg content, c-axis length is measured by X-ray diffraction and is well associated with Mg content. The interpolation enables the determination of Mg content to x = 0.023, where the peak from the ZnO substrate overlaps the MgxZn1-xO peak in standard laboratory equipment, and thus quantitative determination. At dilute Mg contents below x = 0.023, the localized exciton peak energy of the MgxZn1-xO films as measured by photoluminescence is found to show a linear Mg content dependence, which is well resolved from the free exciton peak of ZnO substrate down to x = 0.0043. Our results demonstrate that X-ray diffraction and photoluminescence in combination are appropriate methods to determine Mg content in a wide Mg range from x = 0.004 to 0.40 in a laboratory environment.

cond-mat.mtrl-sci↗

arXiv2012

Ultrafast optical control of magnetization in EuO thin films

All-optical pump-probe detection of magnetization precession has been performed for ferromagnetic EuO thin films at 10 K. We demonstrate that the circularly-polarized light can be used to control the magnetization precession on an ultrafast time scale. This takes place within the 100 fs duration of a single laser pulse, through combined contribution from two nonthermal photomagnetic effects, i.e., enhancement of the magnetization and an inverse Faraday effect. From the magnetic field dependences of the frequency and the Gilbert damping parameter, the intrinsic Gilbert damping coefficient is evaluated to be α \approx 3\times10^-3.

cond-mat.mtrl-sci↗

arXiv2012

Ultrafast Time-Resolved Faraday Rotation in EuO Thin Films

We have investigated the ultrafast spin dynamics in EuO thin films by time-resolved Faraday rotation spectroscopy. The photoinduced magnetization is found to be increased in a transient manner, accompanied with subsequent demagnetization. The dynamical magnetization enhancement showed a maximum slightly below the Curie temperature with prolonged tails toward both lower and higher temperatures and dominates the demagnetization counterpart at 55 K. The magnetization enhancement component decays in ~1 ns. The realization of the transient collective ordering is attributable to the enhancement of the f-d exchange interaction.

cond-mat.mtrl-sci↗

arXiv2006

Monte-Carlo simulation of localization dynamics of excitons in ZnO and CdZnO quantum well structures

Localization dynamics of excitons was studied for ZnO/MgZnO and CdZnO/MgZnO quantum wells (QW). The experimental photoluminescence (PL) and absorption data were compared with the results of Monte Carlo simulation in which the excitonic hopping was modeled. The temperature-dependent PL linewidth and Stokes shift were found to be in a qualitatively reasonable agreement with the hopping model, with accounting for an additional inhomogeneous broadening for the case of linewidth. The density of localized states used in the simulation for the CdZnO QW was consistent with the absorption spectrum taken at 5 K.

cond-mat.mtrl-sci↗

arXiv2005

Majority-Carrier Mobilities in Undoped and \textit{n}-type Doped ZnO Epitaxial Layers

Transparent and conductive ZnO:Ga thin films are prepared by laser molecular-beam epitaxy. Their electron properties were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s \sim 10^{16}$ cm$^{-3}$ and 440 cm$^{2}$/Vs, respectively. In the experimental `mobility vs concentration' curve, unusual phenomenon was observed, i.e., mobilities at $n_s \sim 5\times$ 10$^{18}$ cm$^{-3}$ are significantly smaller than those at higher densities above $\sim 10^{20}$ cm$^{-3}$. Several types of scattering centers including ionized donors and oxygen traps are considered to account for the observed dependence of the Hall mobility on carrier concentration. The scattering mechanism is explained in terms of inter-grain potential barriers and charged impurities. A comparison between theoretical results and experimental data is made.

cond-mat.mtrl-sci↗

arXiv2005

Analysis on reflection spectra in strained ZnO thin films

Thin films of laser molecular-beam epitaxy grown ZnO films were studied with respect to their optical properties. 4-K reflectivity was used to analyze various samples grown at different biaxial in-plane strain. The spectra show two structures at 3.37 eV corresponding to the A-free exciton transition and at 3.38 eV corresponding to the B-free exciton transition. Theoretical reflectivity spectra were calculated using the spatial dispersion model. Thus, the transverse energies, the longitudinal transversal splitting (ELT,), the oscillator strengths, and the damping parameters were determined for both the A- and B-free excitons of ZnO. As a rough trend, the strain dependence of the energy E_LT for the A-excitons is characterized by a negatively-peaking behavior with a minimum around the zero strain, while ELT for the B-excitons is an increasing function of the strain field values.

cond-mat.mtrl-sci↗

arXiv2005

Spectral shape analysis of ultraviolet luminescence in \textit{n}-type ZnO:Ga

Thin films of laser molecular-beam epitaxy grown \textit{n}-type Ga-doped ZnO were investigated with respect to their optical properties. Intense room-temperature photoluminescence (PL) in the near-band edge (NBE) region was observed. Moreover, its broadening of PL band was significantly larger than predicted by theoretical results modeled in terms of potential fluctuations caused by the random distribution of donor impurities. In addition, the lineshape was rather asymmetrical. To explain these features of the NBE bands, a vibronic model was developed accounting for contributions from a series of phonon replicas.

cond-mat.mtrl-sci↗

arXiv2005

Electron transport in ZnO thin films

Epitaxial, n-type ZnO films grown by a laser molecular-beam epitaxy method were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s \sim 10^{16}$ cm$^{-3}$ and 440 cm$^{2}$/Vs, respectively. Transport characteristics are calculated by solving the Boltzmann transport equation using a variational method. Mobility limit of 430 cm$^{2}$/Vs was calculated at 300 K. The temperature dependence of the mobility for an undoped film is calculated and agrees favorably well with experimental data if physical parameters are chosen so as to approach to those. In the experimental `mobility vs concentration' curve, unusual phenomenon was observed, i.e., mobilities at $n_s \sim 5\times$ 10$^{18}$ cm$^{-3}$ are significantly smaller than those at higher densities above $\sim 10^{20}$ cm$^{-3}$. It is qualitatively explained in terms of electron-plasmon interaction.

cond-mat.mtrl-sci↗

arXiv2005

Exciton-optical-phonon coupling: comparison with experiments for ZnO quantum wells

The temperature-dependent linewidths of excitons in ZnO quantum wells were studied by measuring absorption spectra from 5 K to room temperature. We deduced experimentally the exciton-longitudinal-optical (LO) phonon coupling strength, which showed reduction of coupling with decrease in well width. This reduction was explained in terms of confinement-induced enhancement of the excitonic binding energy by comparing the binding energy dependence of calculated coupling strength.

cond-mat.mtrl-sci↗