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arXiv · 2105.15040

Single-crystal hexagonal boron nitride monolayer epitaxially grown on Cu (111) thin film across a wafer

Tse-An Chen·Chih-Piao Chuu·Chien-Chih Tseng·Chao-Kai Wen·H. -S. Philip Wong·Shuangyuan Pan·Rongtan Li·Yanfeng Zhang·Qiang Fu·Boris I. Yakobson·Wen-Hao Chang·Lain-Jong Li
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Abstract

We demonstrate single crystal growth of wafer-scale hexagonal boron nitride (hBN), an insulating atomic thin monolayer, on high-symmetry index surface plane Cu(111). The unidirectional epitaxial growth is guaranteed by large binding energy difference, ~0.23 eV, between A- and B-steps edges on Cu(111) docking with B6N7 clusters, confirmed by density functional theory calculations.

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Tse-An Chen, Chih-Piao Chuu, Chien-Chih Tseng, Chao-Kai Wen, H. -S. Philip Wong, Shuangyuan Pan, Rongtan Li, Yanfeng Zhang, Qiang Fu, Boris I. Yakobson, Wen-Hao Chang, Lain-Jong Li. 2021-05-31. Single-crystal hexagonal boron nitride monolayer epitaxially grown on Cu (111) thin film across a wafer. https://doi.org/10.1038/s41586-020-2009-2

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