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arXiv · 2106.04719

Tunable spin-orbit coupling in two-dimensional InSe

A. Ceferino·S. J. Magorrian·V. Zólyomi·D. A. Bandurin·A. K. Geim·A. Patanè·Z. D. Kovalyuk·Z. R. Kudrynskyi·I. V. Grigorieva·V. I. Fal'ko
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Abstract

We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $γ$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid $\mathbf{k\cdot p}$ tight-binding model, fully parameterized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment.

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A. Ceferino, S. J. Magorrian, V. Zólyomi, D. A. Bandurin, A. K. Geim, A. Patanè, Z. D. Kovalyuk, Z. R. Kudrynskyi, I. V. Grigorieva, V. I. Fal'ko. 2021-06-08. Tunable spin-orbit coupling in two-dimensional InSe. https://doi.org/10.1103/physrevb.104.125432

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