arXiv subjects

V. Zólyomi

Publications and source records attributed to V. Zólyomi.

12 recordsLinked to original sources

arXiv2023

Ultralong 100 ns Spin Relaxation Time in Graphite at Room Temperature

Graphite has been intensively studied, yet its electron spins dynamics remains an unresolved problem even 70 years after the first experiments. The central quantities, the longitudinal ($T_1$) and transverse ($T_2$) relaxation times were postulated to be equal, mirroring standard metals, but $T_1$ has never been measured for graphite. Here, based on a detailed band structure calculation including spin-orbit coupling, we predict an unexpected behavior of the relaxation times. We find, based on saturation ESR measurements, that $T_1$ is markedly different from $T_2$. Spins injected with perpendicular polarization with respect to the graphene plane have an extraordinarily long lifetime of $100$ ns at room temperature. This is ten times more than in the best graphene samples. The spin diffusion length across graphite planes is thus expected to be ultralong, on the scale of $\sim 70~μ$m, suggesting that thin films of graphite -- or multilayer AB graphene stacks -- can be excellent platforms for spintronics applications compatible with 2D van der Waals technologies. Finally, we provide a qualitative account of the observed spin relaxation based on the anisotropic spin admixture of the Bloch states in graphite obtained from density functional theory calculations.

cond-mat.mes-hall↗

arXiv2021

Multifaceted moiré superlattice physics in twisted WSe$_2$ bilayers

Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moiré potentials for electrons and holes, as well as a modulation of the hybridisation across the bilayer. Here, we develop hybrid $\mathbf{k}\cdot \mathbf{p}$ tight-binding models to describe electrons and holes in the relevant valleys of twisted TMD homobilayers with parallel (P) and anti-parallel (AP) orientations of the monolayer unit cells. We apply these models to describe moiré superlattice effects in twisted WSe${}_2$ bilayers, in conjunction with microscopic \emph{ab initio} calculations, and considering the influence of encapsulation, pressure and an electric displacement field. Our analysis takes into account mesoscale lattice relaxation, interlayer hybridisation, piezopotentials, and a weak ferroelectric charge transfer between the layers, and describes a multitude of possibilities offered by this system, depending on the choices of P or AP orientation, twist angle magnitude, and electron/hole valley.

cond-mat.mes-hall↗

arXiv2021

Tunable spin-orbit coupling in two-dimensional InSe

We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $γ$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid $\mathbf{k\cdot p}$ tight-binding model, fully parameterized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment.

cond-mat.mes-hall↗

arXiv2020

Stacking domains and dislocation networks in marginally twisted bilayers of transition metal dichalcogenides

We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop DFT-parametrized interpolation formulae for interlayer adhesion energies of MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$, combine those with elasticity theory, and analyze the bilayer lattice relaxation into mesoscale domain structures. Paying particular attention to the inversion asymmetry of TMD monolayers, we show that 3R and 2H stacking domains, separated by a network of dislocations develop for twist angles $θ^{\circ}<θ^{\circ}_P\sim 2.5^{\circ}$ and $θ^{\circ}<θ^{\circ}_{AP}\sim 1^{\circ}$ for, respectively, bilayers with parallel (P) and antiparallel (AP) orientation of the monolayer unit cells and suggest how the domain structures would manifest itself in local probe scanning of marginally twisted P- and AP-bilayers.

cond-mat.mes-hall↗

arXiv2017

Spin-orbit coupling, optical transitions, and spin pumping in mono- and few-layer InSe

We show that spin-orbit coupling (SOC) in InSe enables the optical transition across the principal band gap to couple with in-plane polarized light. This transition, enabled by $p_{x,y}\leftrightarrow p_z$ hybridization due to intra-atomic SOC in both In and Se, can be viewed as a transition between two dominantly $s$- and $p_z$-orbital based bands, accompanied by an electron spin-flip. Having parametrized $\mathbf{k\cdot p}$ theory using first principles density functional theory we estimate the absorption for $σ^{\pm}$ circularly polarized photons in the monolayer as $\sim 1.5\%$, which saturates to $\sim 0.3\%$ in thicker films ($3-5$ layers). Circularly polarized light can be used to selectively excite electrons into spin-polarized states in the conduction band, which permits optical pumping of the spin polarization of In nuclei through the hyperfine interaction.

cond-mat.mes-hall↗

arXiv2016

Electronic and optical properties of two-dimensional InSe from a DFT-parameterized tight-binding model

We present a tight-binding (TB) model and $\mathbf{k\cdot p}$ theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all $s$ and $p$ valence orbitals on both indium and selenium atoms, with tight-binding parameters obtained from fitting to independently computed density functional theory (DFT) band structures for mono- and bilayer InSe. For the valence and conduction band edges of few-layer InSe, which appear to be in the vicinity of the $Γ$ point, we calculate the absorption coefficient for the principal optical transitions as a function of the number of layers, $N$. We find a strong dependence on $N$ of the principal optical transition energies, selection rules, and optical oscillation strengths, in agreement with recent observations \cite{Bandurin2016}. Also, we find that the conduction band electrons are relatively light ($m \propto 0.14-0.18 m_e$), in contrast to an almost flat, and slightly inverted, dispersion of valence band holes near the $Γ$-point, which is found for up to $N \propto 6$.

cond-mat.mes-hall↗

arXiv2016

Doped carbon nanotubes as a model system of biased graphene

Albeit difficult to access experimentally, the density of states (DOS) is a key parameter in solid state systems which governs several important phenomena including transport, magnetism, thermal, and thermoelectric properties. We study DOS in an ensemble of potassium intercalated single-wall carbon nanotubes (SWCNT) and show using electron spin resonance spectroscopy that a sizeable number of electron states are present, which gives rise to a Fermi-liquid behavior in this material. A comparison between theoretical and the experimental DOS indicates that it does not display significant correlation effects, even though the pristine nanotube material shows a Luttinger-liquid behavior. We argue that the carbon nanotube ensemble essentially maps out the whole Brillouin zone of graphene thus it acts as a model system of biased graphene.

cond-mat.str-el↗

arXiv2015

Towards improved exact exchange functionals relying on GW quasiparticle methods for parametrization

We use fully self-consistent GW calculations on diamond and silicon carbide to reparametrize the Heyd-Scuseria-Ernzerhof exact exchange density functional for use in band structure calculations of semiconductors and insulators. We show that the thus modified functional is able to calculate the band structure of bulk Si, Ge, GaAs, and CdTe with good quantitative accuracy at a significantly reduced computational cost as compared to GW methods. We discuss the limitations of this functional in low-dimensions by calculating the band structures of single-layer hexagonal BN and MoS$_{2}$, and by demonstrating that the diameter scaling of curvature induced band gaps in single-walled carbon nanotubes is still physically incorrect using our functional; we consider possible remedies to this problem.

cond-mat.mes-hall↗

arXiv2014

Silicane and germanane: tight-binding and first-principles studies

We present a first-principles and tight-binding model study of silicane and germanane, the hydrogenated derivatives of two-dimensional silicene and germanene. We find that the materials are stable in freestanding form, analyse the orbital composition, and derive a tight-binding model using first-principles calculations to fit the parameters.

cond-mat.mtrl-sci↗

arXiv2013

Band Structure and Optical Transitions in Atomic Layers of Hexagonal Gallium Chalcogenides

We report density-functional-theory calculations of the electronic band structures and optical absorption spectra of two-dimensional crystals of Ga$_2$X$_2$ (X=S, Se, and Te). Our calculations show that all three two-dimensional materials are dynamically stable indirect-band-gap semiconductors with a Mexican-hat dispersion of holes near the top of the valence band. We predict the existence of Lifshitz transitions---changes in the Fermi-surface topology of hole-doped Ga$_2$X$_2$---at hole concentrations $n_{S}=7.96\times 10^{13}$ cm$^{-2}$, $n_{Se}=6.13\times 10^{13}$ cm$^{-2}$, and $n_{Te}=3.54\times 10^{13}$ cm$^{-2}$.

cond-mat.mes-hall↗

arXiv2008

Electron spin resonance signal of Luttinger liquids and single-wall carbon nanotubes

A comprehensive theory of electron spin resonance (ESR) for a Luttinger liquid (LL) state of correlated metals is presented. The ESR measurables such as the signal intensity and the line-width are calculated in the framework of Luttinger liquid theory with broken spin rotational symmetry as a function of magnetic field and temperature. We obtain a significant temperature dependent homogeneous line-broadening which is related to the spin symmetry breaking and the electron-electron interaction. The result crosses over smoothly to the ESR of itinerant electrons in the non-interacting limit. These findings explain the absence of the long-sought ESR signal of itinerant electrons in single-wall carbon nanotubes when considering realistic experimental conditions.

cond-mat.str-el↗

arXiv2007

Inter-shell interaction in double walled carbon nanotubes: charge transfer and orbital mixing

Recent nuclear magnetic resonance measurements on isotope engineered double walled carbon nanotubes (DWCNTs) surprisingly suggest a uniformly metallic character of all nanotubes, which can only be explained by the interaction between the layers. Here we study the inter-shell interaction in DWCNTs by density functional theory and inter-molecular Hückel model. We find charge transfer between the layers using both methods. We show that not only does the charge transfer appear already at the fundamental level of the inter-molecular Hückel model, but also that the spatial distribution of the change in the electron density is well described already at this level of theory. We find that the charge transfer between the walls is on the order of 0.001 e/atom and that the inner tube is always negatively charged. We also observe orbital mixing between the states of the layers. We find that these two effects combined can in some cases lead to a semiconductor--to--metal transition of the double walled tube, but not necessarily in all cases.

cond-mat.mtrl-sci↗