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arXiv · 2107.01853

Ferroelectric Tunneling Junctions for Edge Computing

Erika Covi·Quang T. Duong·Suzanne Lancaster·Viktor Havel·Jean Coignus·Justine Barbot·Ole Richter·Philip Klein·Elisabetta Chicca·Laurent Grenouillet·Athanasios Dimoulas·Thomas Mikolajick·Stefan Slesazeck
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Abstract

Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.

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Erika Covi, Quang T. Duong, Suzanne Lancaster, Viktor Havel, Jean Coignus, Justine Barbot, Ole Richter, Philip Klein, Elisabetta Chicca, Laurent Grenouillet, Athanasios Dimoulas, Thomas Mikolajick, Stefan Slesazeck. 2021-07-05. Ferroelectric Tunneling Junctions for Edge Computing. https://doi.org/10.1109/iscas51556.2021.9401800

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