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arXiv · 2107.03695

Detecting induced $p \pm ip$ pairing at the Al-InAs interface with a quantum microwave circuit

D. Phan·J. Senior·A. Ghazaryan·M. Hatefipour·W. M. Strickland·J. Shabani·M. Serbyn·A. P. Higginbotham
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Abstract

Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a strong fingerprint from the two-component nature of the hybrid system, and quantitatively compare with a theory that includes the contribution of intraband $p \pm i p$ pairing in the InAs, as well as the emergence of Bogoliubov-Fermi surfaces due to magnetic field. Separately resolving the Al and InAs contributions allows us to determine the carrier density and mobility in the InAs.

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D. Phan, J. Senior, A. Ghazaryan, M. Hatefipour, W. M. Strickland, J. Shabani, M. Serbyn, A. P. Higginbotham. 2021-07-08. Detecting induced $p \pm ip$ pairing at the Al-InAs interface with a quantum microwave circuit. https://doi.org/10.1103/physrevlett.128.107701

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