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W. M. Strickland

Publications and source records attributed to W. M. Strickland.

3 recordsLinked to original sources

Kerr nonlinearity and parametric amplification with an Al-InAs superconductor-semiconductor Josephson junction

Nearly quantum limited Josephson parametric amplifiers (JPAs) are essential components in superconducting quantum circuits. However, higher order nonlinearities of the Josephson cosine potential are known to cause gain compression, therefore limiting scalability. In an effort to reduce the fourth order, or Kerr nonlinearity, we realize a parametric amplifier with an Al-InAs superconductor-semiconductor hybrid Josephson junction (JJ). We extract the Kerr nonlinearity of the Al-InAs JJ from two different devices and show that it is three orders of magnitude lower compared to an Al-$\text{AlO}_\text{X}$ junction with identical Josephson inductance. We then demonstrate a four-wave-mixing (4WM) parametric amplifier made with an Al-InAs junction that achieves more than 20 dB of gain and -119 dBm of compression power, that outperforms single resonant JPAs based on Al junctions.

quant-ph

Gate-tunable, superconductor-semiconductor parametric amplifier

We have built a parametric amplifier with a Josephson field effect transistor (JoFET) as the active element. The device's resonant frequency is field-effect tunable over a range of 2 GHz. The JoFET amplifier has 20 dB of gain, 4 MHz of instantaneous bandwidth, and a 1 dB compression point of -125.5 dBm when operated at a fixed resonance frequency.

quant-ph

Detecting induced $p \pm ip$ pairing at the Al-InAs interface with a quantum microwave circuit

Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a strong fingerprint from the two-component nature of the hybrid system, and quantitatively compare with a theory that includes the contribution of intraband $p \pm i p$ pairing in the InAs, as well as the emergence of Bogoliubov-Fermi surfaces due to magnetic field. Separately resolving the Al and InAs contributions allows us to determine the carrier density and mobility in the InAs.

cond-mat.supr-con