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arXiv · 2107.04143

Ultra-Thin All-Epitaxial Plasmonic Detectors

Leland Nordin·Priyanka Petluru·Abhilasha Kamboj·Aaron J. Muhowski·Daniel Wasserman
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Abstract

We present an infrared photodetector leveraging an all-epitaxial device architecture consisting of a 'designer' plasmonic metal integrated with a quantum-engineered detector structure, all in a mature III-V semiconductor material system. Incident light is coupled into surface plasmon-polariton modes at the detector/'designer' metal interface, and the strong confinement of these modes allows for a sub-diffractive ($\sim \lambda_0 / 33$) detector absorber layer thickness, effectively decoupling the detector's absorption efficiency and dark current. We demonstrate high-performance detectors operating at non-cryogenic temperatures (T = 195 K), without sacrificing external quantum efficiency, and superior to well established and commercially-available detectors. This work provides a practical and scalable plasmonic optoelectronic device architecture with real world mid-infrared applications.

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Leland Nordin, Priyanka Petluru, Abhilasha Kamboj, Aaron J. Muhowski, Daniel Wasserman. 2021-07-08. Ultra-Thin All-Epitaxial Plasmonic Detectors. https://doi.org/10.1364/optica.438039

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