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arXiv · 2107.13371

Thin-Film InGaAs Metamorphic Buffer for telecom C-band InAs Quantum Dots and Optical Resonators on GaAs Platform

Robert Sittig·Cornelius Nawrath·Sascha Kolatschek·Stephanie Bauer·Richard Schaber·Jiasheng Huang·Ponraj Vijayan·Simone Luca Portalupi·Michael Jetter·Peter Michler
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Abstract

The GaAs-based material system is well-known for the implementation of InAs quantum dots (QDs) with outstanding optical properties. However, these dots typically emit at a wavelength of around 900nm. The insertion of a metamorphic buffer (MMB) can shift the emission to the technologically attractive telecom C-band range centered at 1550nm. However, the thickness of common MMB designs limits their compatibility with most photonic resonator types. Here we report on the MOVPE growth of a novel InGaAs MMB with a non-linear indium content grading profile designed to maximize plastic relaxation within minimal layer thickness. Single-photon emission at 1550nm from InAs QDs deposited on top of this thin-film MMB is demonstrated. The strength of the new design is proven by integrating it into a bullseye cavity via nano-structuring techniques. The presented advances in the epitaxial growth of QD/MMB structures form the basis for the fabrication of high-quality telecom non-classical light sources as a key component of photonic quantum technologies.

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physics.opticscond-mat.mes-hallcond-mat.mtrl-sciquant-ph

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Robert Sittig, Cornelius Nawrath, Sascha Kolatschek, Stephanie Bauer, Richard Schaber, Jiasheng Huang, Ponraj Vijayan, Simone Luca Portalupi, Michael Jetter, Peter Michler. 2021-07-28. Thin-Film InGaAs Metamorphic Buffer for telecom C-band InAs Quantum Dots and Optical Resonators on GaAs Platform. https://arxiv.org/abs/2107.13371

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