arXiv subjects

Robert Sittig

Publications and source records attributed to Robert Sittig.

7 recordsLinked to original sources

arXiv2026

Planar metal-semiconductor Yagi-Uda type antennas for tunable narrow-linewidth quantum dot emitters

Tunable photonic architectures that improve the extraction efficiency of light from embedded epitaxial quantum dots across a wide spectral range are key enablers for developing bright sources of single and indistinguishable photons. In this study, we experimentally demonstrate planar multilayer antenna structures consisting of epitaxially grown AlGaAs and InGaAs membranes containing quantum dots sandwiched between metallic Au (or Ag) reflector and director layers together with Al$_2$O$_3$ spacer layers. We show that the linewidths and fine-structure splitting of the neutral exciton emission remain comparable to those measured in the corresponding unprocessed samples, demonstrating that the fabrication process preserves the optical quality of the emitters. In addition to broadband operation, we demonstrate that the planar architecture is compatible with electrical tuning via integrated diode structures, and strain tuning using piezoelectric actuators. In spite of limitations related to optical losses in the ultrathin metallic layers, the demonstrated fabrication simplicity, scalability, and compatibility with tunable quantum emitters establish planar antennas as a promising platform for solid-state quantum photonic devices.

physics.optics↗

arXiv2023

Robust excitation of C-band quantum dots for quantum communication

Building a quantum internet requires efficient and reliable quantum hardware, from photonic sources to quantum repeaters and detectors, ideally operating at telecommunication wavelengths. Thanks to their high brightness and single-photon purity, quantum dot (QD) sources hold the promise to achieve high communication rates for quantum-secured network applications. Furthermore, it was recently shown that excitation schemes, such as longitudinal acoustic phonon-assisted (LA) pumping, provide security benefits by scrambling the coherence between the emitted photon-number states. In this work, we investigate further advantages of LA-pumped quantum dots with emission in the telecom C-band as a core hardware component of the quantum internet. We experimentally demonstrate how varying the pump energy and spectral detuning with respect to the excitonic transition can improve quantum-secured communication rates and provide stable emission statistics regardless of network-environment fluctuations. These findings have significant implications for general implementations of QD single-photon sources in practical quantum communication networks.

quant-ph↗

arXiv2023

Triggered telecom C-band single-photon source with high brightness, high indistinguishability and sub-GHz spectral linewidth

Long-range, terrestrial quantum networks will require high brightness single-photon sources emitting in the telecom C-band for maximum transmission rate. Many applications additionally demand triggered operation with high indistinguishability and narrow spectral linewidth. This would enable the efficient implementation of photonic gate operations and photon storage in quantum memories, as for instance required for a quantum repeater. Especially, semiconductor quantum dots (QDs) have shown these properties in the near-infrared regime. However, the simultaneous demonstration of all these properties in the telecom C-band has been elusive. Here, we present a coherently (incoherently) optically-pumped narrow-band (0.8 GHz) triggered single-photon source in the telecom C-band. The source shows simultaneously high single-photon purity with $g^{(2)}(0) = 0.026$ ($g^{(2)}(0) = 0.014$), high two-photon interference visibility of 0.508 (0.664) and high application-ready rates of 0.75 MHz (1.45 MHz) of polarized photons. The source is based on a QD coupled to a circular Bragg grating cavity combined with spectral filtering. Coherent (incoherent) operation is performed via the novel SUPER scheme (phonon-assisted excitation).

quant-ph↗

arXiv2022

Wavelength-tunable open double-microcavity to enhance two closely spaced optical transitions

Microcavities have long been recognized as indispensable elements in quantum photonic research due to their usefulness for enhanced light extraction and light-matter interaction. A conventional high-Q cavity structure typically allows only a single optical transition to be tuned into resonance with a specific mode. The transition to a more advanced double-cavity structure, however, introduces new and interesting possibilities such as enhancing two spectrally close optical transitions at the same time with two distinct cavity modes. Here, we investigate a cavity structure composed of a monolithic planar cavity enclosed between two semiconductor distributed Bragg reflectors (DBR) and a top dielectric mirror deposited on a fiber tip. While the bottom cavity is formed by the two DBRs, the mirror on the fiber tip and the top DBR of the semiconductor chip create a second tunable cavity. These coupled cavities exhibit mode hybridization when tuned into resonance and their splitting can be adjusted to match with the spectral separation of closely spaced optical transitions by a suitable sample design. Furthermore, we report on the simultaneous resonance tuning of the exciton and biexciton transition of a semiconductor quantum dot, each to a separate mode of the open fiber-based double cavity. Decay time measurements at simultaneous resonance showed a Purcell-factor of $F_P^X$=1.9$\pm$0.4 for the exciton transition.

physics.optics↗

arXiv2022

High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band

Several emission features mark semiconductor quantum dots as promising non-classical light sources for prospective quantum implementations. For long-distance transmission [1] and Si-based on-chip processing[2, 3], the possibility to match the telecom C-band [4] stands out, while source brightness and high single-photon purity are key features in virtually any quantum implementation [5, 6]. Here we present an InAs/InGaAs/GaAs quantum dot emitting in the telecom C-band coupled to a circular Bragg grating. The Purcell enhancement of the emission enables a simultaneously high brightness with a fiber-coupled single-photon count rate of 13.9MHz for an excitation repetition rate of 228MHz (first-lens collection efficiency ca. 17% for NA = 0.6), while maintaining a low multi-photon contribution of g(2)(0) = 0.0052. Moreover, the compatibility with temperatures of up to 40K attainable with compact cryo coolers, further underlines the suitability for out-of-the-lab implementations.

quant-ph↗

arXiv2021

Thin-Film InGaAs Metamorphic Buffer for telecom C-band InAs Quantum Dots and Optical Resonators on GaAs Platform

The GaAs-based material system is well-known for the implementation of InAs quantum dots (QDs) with outstanding optical properties. However, these dots typically emit at a wavelength of around 900nm. The insertion of a metamorphic buffer (MMB) can shift the emission to the technologically attractive telecom C-band range centered at 1550nm. However, the thickness of common MMB designs limits their compatibility with most photonic resonator types. Here we report on the MOVPE growth of a novel InGaAs MMB with a non-linear indium content grading profile designed to maximize plastic relaxation within minimal layer thickness. Single-photon emission at 1550nm from InAs QDs deposited on top of this thin-film MMB is demonstrated. The strength of the new design is proven by integrating it into a bullseye cavity via nano-structuring techniques. The presented advances in the epitaxial growth of QD/MMB structures form the basis for the fabrication of high-quality telecom non-classical light sources as a key component of photonic quantum technologies.

physics.optics↗

arXiv2021

Bright Purcell enhanced single-photon source in the telecom O-band based on a quantum dot in a circular Bragg grating

The combination of semiconductor quantum dots (QDs) with photonic cavities is a promising way to realize non-classical light sources with state-of-the-art performances in terms of brightness, indistinguishability and repetition rate. In the present work we demonstrate the coupling of an InGaAs/GaAs QDs emitting in the telecom O-band to a circular Bragg grating cavity. We demonstrate a broadband geometric extraction efficiency enhancement by investigating two emission lines under above-band excitation, inside and detuned from the cavity mode, respectively. In the first case, a Purcell enhancement of 4 is attained. For the latter case, an end-to-end brightness of 1.4% with a brightness at the first lens of 23% is achieved. Using p-shell pumping, a combination of high count rate with pure single-photon emission (g(2)(0) = 0.01 in saturation) is achieved. Finally a good single-photon purity (g(2)(0) = 0.13) together with a high detector count rate of 191kcps is demonstrated for a temperature of up to 77K.

physics.optics↗