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arXiv · 2108.10173

Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire

Sergey Lazarev·Luca Gelisio·Young Yong Kim·Bi Zhaoxia·Ali Nowzari·Ivan A. Zaluzhnyy·Ruslan Khubbutdinov·Dmitry Dzhigaev·Arno Jeromin·Thomas Keller·Michael Sprung·Anders Mikkelsen·Lars Samuelson·Ivan A. Vartanyants
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Abstract

Semiconductor nanowires (NWs) have a broad range of applications for nano- and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device, especially considering the piezoelectric properties of GaN. Investigation of influence of the metallic contacts on the structure of the NWs is of high importance for their applications in real devices. We have studied a series of different type of contacts and influence of the applied voltage bias on the contacted GaN NWs with the length of about 3 to 4 micrometers and with two different diameters of 200 nm and 350 nm. It was demonstrated that the NWs with the diameter of 200 nm are bend already by the interaction with the substrate. For all GaN NWs, significant structural changes were revealed after the contacts deposition. The results of our research may contribute to the future optoelectronic applications of the GaN nanowires.

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Sergey Lazarev, Luca Gelisio, Young Yong Kim, Bi Zhaoxia, Ali Nowzari, Ivan A. Zaluzhnyy, Ruslan Khubbutdinov, Dmitry Dzhigaev, Arno Jeromin, Thomas Keller, Michael Sprung, Anders Mikkelsen, Lars Samuelson, Ivan A. Vartanyants. 2021-08-23. Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire. https://arxiv.org/abs/2108.10173

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