Topologically protected one-dimensional electronic states in group IV two-dimensional Dirac materials

H. J. W. Zandvliet; J. D. Verbakel; Q. Yao; K. Sotthewes; P. Bampoulis

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arXiv · 2109.03071

Topologically protected one-dimensional electronic states in group IV two-dimensional Dirac materials

H. J. W. Zandvliet·J. D. Verbakel·Q. Yao·K. Sotthewes·P. Bampoulis

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Abstract

In this report we give a brief introduction on the occurrence of topologically protected one-dimensional electronic states in group IV two-dimensional graphene-like materials. We discuss the effect of spin-orbit coupling on the electronic band structure and show that these materials are potential candidates to exhibit the quantum spin Hall effect. The quantum spin Hall effect is characterized by a gapped interior and metallic counter-propagating spin-polarized topologically protected edges states. We also elaborate on the electric-field induced formation of a hexagonal network of one-dimensional topologically protected electronic states in small-angle twisted bilayer graphene.

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H. J. W. Zandvliet, J. D. Verbakel, Q. Yao, K. Sotthewes, P. Bampoulis. 2023-11-27. Topologically protected one-dimensional electronic states in group IV two-dimensional Dirac materials. https://arxiv.org/abs/2109.03071

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