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arXiv · 2109.15275

Single-dopant band bending fluctuations in MoSe$_2$ measured with electrostatic force microscopy

Megan Cowie·Rikke Plougmann·Zeno Schumacher·Peter Grütter
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Abstract

In this work, we experimentally demonstrate two-state fluctuations in a metal-insulator-semiconductor (MIS) device formed out of a metallic atomic force microscopy tip, vacuum gap, and multilayer MoSe$_2$ sample. We show that noise in this device is intrinsically bias-dependent due to the bias-dependent surface potential, and does not require that the frequency or magnitude of individual dopant fluctuations are themselves bias-dependent. Finally, we measure spatial nonhomogeneities in band bending (charge reorganization) timescales.

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Megan Cowie, Rikke Plougmann, Zeno Schumacher, Peter Grütter. 2022-06-15. Single-dopant band bending fluctuations in MoSe$_2$ measured with electrostatic force microscopy. https://doi.org/10.1103/physrevlett.130.058204

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