arXiv subjects

Peter Grütter

Publications and source records attributed to Peter Grütter.

10 recordsLinked to original sources

arXiv2025

Hydrogen Passivation Effects on Spatially Resolved Charge Trap Densities in Si(100)-SiO$_2$

As silicon-based devices continue to shrink to the nanoscale, traps at the Si-SiO$_2$ interface pose increasing challenges to device performance. These traps reduce channel carrier mobility and shift threshold voltages in integrated circuits, and introduce charge noise in quantum systems, reducing their coherence times. Knowledge of the precise location of such traps aids in understanding their influence on device performance. In this work, we demonstrate that frequency-modulated atomic force microscopy (fm-AFM) allows the detection of individual traps. We use this to study how sample preparation, specifically the introduction of a buried hydrogen termination layer, and post-processing annealing in forming gas (N$_2$+H$_2$), affects the density of donor-like traps in Si(100)-SiO$_2$ systems. We spatially map and quantify traps in both conventionally prepared ("pristine") silicon samples and those processed under ultra-high vacuum for hydrogen resist lithography (HRL). We confirm previous studies demonstrating hydrogen passivation of traps and find that hydrogen termination further reduces the donor-like trap density. We also observe a significant reduction in two-level donor-like traps in the hydrogen-terminated samples compared to pristine silicon samples. These findings suggest that HRL-prepared silicon may offer advantages for high-performance nanoscale and atomic-scale devices due to reduced trap densities.

cond-mat.mtrl-sci↗

arXiv2024

Spatially resolved dielectric loss at the Si/SiO$_2$ interface

The Si/SiO$_2$ interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic devices. Here, we study the electric susceptibility of the Si/SiO$_2$ interface with nm spatial resolution using frequency-modulated atomic force microscopy to measure a patterned dopant delta-layer buried 2 nm beneath the silicon native oxide interface. We show that surface charge organization timescales, which range from 1-150 ns, increase significantly around interfacial states. We conclude that dielectric loss under time-varying gate biases at MHz and sub-MHz frequencies in metal-insulator-semiconductor capacitor device architectures is highly spatially heterogeneous over nm length scales. Supplemental GIFs can be found at https://doi.org/10.6084/m9.figshare.25546687

cond-mat.mtrl-sci↗

arXiv2022

Single-dopant band bending fluctuations in MoSe$_2$ measured with electrostatic force microscopy

In this work, we experimentally demonstrate two-state fluctuations in a metal-insulator-semiconductor (MIS) device formed out of a metallic atomic force microscopy tip, vacuum gap, and multilayer MoSe$_2$ sample. We show that noise in this device is intrinsically bias-dependent due to the bias-dependent surface potential, and does not require that the frequency or magnitude of individual dopant fluctuations are themselves bias-dependent. Finally, we measure spatial nonhomogeneities in band bending (charge reorganization) timescales.

cond-mat.mes-hall↗

arXiv2021

How high is a MoSe$_2$ monolayer?

Transition metal dichalcogenides (TMDCs) have attracted significant attention for optoelectronic, photovoltaic and photoelectrochemical applications. The properties of TMDCs are highly dependent on the number of stacked atomic layers, which is usually counted post-fabrication, using a combination of optical methods and atomic force microscopy (AFM) height measurements. Here, we use photoluminescence spectroscopy and three different AFM methods to demonstrate significant discrepancies in height measurements of exfoliated MoSe$_2$ flakes on SiO$_2$ depending on the method used. We highlight that overlooking effects from electrostatic forces, contaminants and surface binding can be misleading when measuring the height of a MoSe$_2$ flake. These factors must be taken into account as a part of the protocol for counting TMDC layers.

physics.app-ph↗

arXiv2018

Amplitude dependence of resonance frequency and its consequences for scanning probe microscopy

With recent advances in scanning probe microscopy (SPM), it is now routine to determine the atomic structure of surfaces and molecules while quantifying the local tip-sample interaction potentials. Such quantitative experiments are based on the accurate measurement of the resonance frequency shift due to the tip-sample interaction. Here, we experimentally show that the resonance frequency of oscillating probes used for SPM experiments change systematically as a function of oscillation amplitude under typical operating conditions. This change in resonance frequency is not due to tip-sample interactions, but rather due to the cantilever strain or geometric effects and thus the resonance frequency being a function of the oscillation amplitude. Our numerical calculations demonstrate that the amplitude dependence of the resonance frequency is an additional yet overlooked systematic error source that can result nonnegligible errors in measured interaction potentials and forces. Our experimental results and complementary numerical calculations reveal that the frequency shift due to this amplitude dependence needs to be corrected even for experiments with active oscillation amplitude control to be able to quantify the tip-sample interaction potentials and forces with milli-electron volt and pico-Newton resolutions.

physics.app-ph↗

arXiv2013

Transient adhesion and conductance phenomena in initial nanoscale mechanical contacts between dissimilar metals

We report on transient adhesion and conductance phenomena associated with tip wetting in mechanical contacts produced by the indentation of a clean W(111) tip into a Au(111) surface. A combination of atomic force microscopy and scanning tunneling microscopy was used to carry out indentation and to image residual impressions in ultra-high vacuum. The ~7 nm radii tips used in these experiments were prepared and characterized by field ion microscopy in the same instrument. The very first indentations of the tungsten tips show larger conductance and pull-off adhesive forces than subsequent indentations. After ~30 indentations to a depth of ~1.7 nm, the maximum conductance and adhesion forces reach steady-state values approximately 12x and 6x smaller than their initial value. Indentation of W(111) tips into Cu(100) was also performed to investigate the universality of tip wetting phenomena with a different substrate. We propose a model from contact mechanics considerations which quantitatively reproduces the observed decay rate of the conductance and adhesion drops with a 1/e decay constant of 9-14 indentation cycles. The results show that the surface composition of an indenting tip plays an important role in defining the mechanical and electrical properties of indentation contacts.

cond-mat.mtrl-sci↗

arXiv2013

FIM tips in SPM: Apex orientation and temperature considerations on atom transfer and diffusion

Atoms transferred to W(111) and W(110) tip apices from the Au(111) surface during tunneling and approach to mechanical contact experiments in STM are characterized in FIM at room temperature and at 158 K. The different activation energies for diffusion on the (111) and (110) tip planes and the experiment temperature are shown to be important factors controlling the extent of changes to the atomic structure of the tip. W(111) tips are much better suited to scanning probe studies which require the characterization of an atomically defined tip and subsequent verification of its integrity in FIM. The statistics of the observed spikes in the tunneling current when the tips are approached to Au(111) are interpreted using a simple model of adatoms diffusing through the STM junction.

cond-mat.mtrl-sci↗

arXiv2013

Comment on 'Field ion microscopy characterized tips in noncontact atomic force microscopy: Quantification of long-range force interactions'

A recent article by Falter et al. (Phys. Rev. B 87, 115412 (2013)) presents experimental results using field ion microscopy characterized tips in noncontact atomic force microscopy in order to characterize electrostatic and van der Waals long range forces. In the article, the tip radius was substantially underestimated at ~4.7 nm rather than ~8.1 nm due to subtleties in the application of the ring counting method. We point out where common errors in ring counting arise in order to benefit future experimental work in which the determination of tip radius by FIM is important.

cond-mat.mes-hall↗

arXiv2012

Implementation of atomically defined Field Ion Microscopy tips in Scanning Probe Microscopy

The Field Ion Microscope (FIM) can be used to characterize the atomic configuration of the apex of sharp tips. These tips are well suited for Scanning Probe Microscopy (SPM) since they predetermine SPM resolution and electronic structure for spectroscopy. A protocol is proposed to preserve the atomic structure of the tip apex from etching due to gas impurities during the transfer period from FIM to SPM, and estimations are made regarding the time limitations of such an experiment due to contamination by ultra-high vacuum (UHV) rest gases. While avoiding any current setpoint overshoot to preserve the tip integrity, we present results from approaches of atomically defined tungsten tips to the tunneling regime with Au(111), HOPG, and Si(111) surfaces at room temperature. We conclude from these experiments that adatom mobility and physisorbed gas on the sample surface limit the choice of surfaces for which the tip integrity is preserved in tunneling experiments at room temperature. The atomic structure of FIM tip apices is unchanged only after tunneling to the highly reactive Si(111) surface.

cond-mat.mes-hall↗

arXiv2009

Damping of a nanomechanical oscillator strongly coupled to a quantum dot

We present theoretical and experimental results on the mechanical damping of an atomic force microscope cantilever strongly coupled to a self-assembled InAs quantum dot. When the cantilever oscillation amplitude is large, its motion dominates the charge dynamics of the dot which in turn leads to nonlinear, amplitude-dependent damping of the cantilever. We observe highly asymmetric lineshapes of Coulomb blockade peaks in the damping that reflect the degeneracy of energy levels on the dot, in excellent agreement with our strong coupling theory. Furthermore, we predict that excited state spectroscopy is possible by studying the damping versus oscillation amplitude, in analogy to varying the amplitude of an ac gate voltage.

cond-mat.mes-hall↗