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arXiv · 2111.05627

Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure

Jonginn Yun·Suhan Son·Jeacheol Shin·Giung Park·Kaixuan Zhang·Young Jae Shin·Je-Geun Park·Dohun Kim
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Abstract

We report unidirectional charge transport in a $\mathrm{NbSe_2}$ noncentrosymmetric superconductor, which is exchange-coupled with a $\mathrm{CrPS_4}$ van der Waals layered antiferromagnetic insulator. The $\mathrm{NbSe_2/CrPS_4}$ bilayer device exhibits bias-dependent superconducting critical-current variations of up to $16\%$, with the magnetochiral anisotropy reaching $\sim 10^5\mathrm{\ T^{-1}A^{-1}}$. Furthermore, the $\mathrm{CrPS_4/NbSe_2/CrPS_4}$ spin-valve structure exhibits the superconducting diode effect with critical-current variations of up to $40\%$. We also utilize the magnetic proximity effect to induce switching in the superconducting state of the spin-valve structure. It exhibits an infinite magnetoresistance ratio depending on the field sweep direction and magnetization configuration. Our result demonstrates a novel route for enhancing the nonreciprocal response in the weak external field regime ($<50\mathrm{\ mT}$) by exploiting the magnetic proximity effect.

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Jonginn Yun, Suhan Son, Jeacheol Shin, Giung Park, Kaixuan Zhang, Young Jae Shin, Je-Geun Park, Dohun Kim. 2021-11-10. Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure. https://doi.org/10.1103/physrevresearch.5.l022064

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