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Giung Park

Publications and source records attributed to Giung Park.

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Probing intrinsic magnetic phases in low-dimensional nearly twin-free NiPS$_3$ single crystals

We report the intrinsic thermal and magnetic properties of the low-dimensional van der Waals (vdW) antiferromagnet NiPS$_3$ and explore its emergent magnetic phases by controlling crystallographic twinning. Using nearly twin-free crystals, we resolve intrinsic properties that are typically obscured by multidomain effects in bulk samples. Magnetization results reveal a highly anisotropic, sharp spin-flop transition, confirming the high domain purity of our crystals. Furthermore, high-precision thermodynamic and transport data reveal a broad fluctuation regime around the N\'eel temperature ($T_{\mathrm{N}}$ = 157.5 K), with a heat capacity anomaly and a concurrent suppression of thermal conductivity. Field-dependent thermal transport shows a small but distinct contribution from spin-lattice coupling, as evidenced by the dip at the spin-flop transition. We develop a theoretical model to explain these properties reported in this paper, with good agreement between experiment and theory. Our work establishes a definitive baseline for bulk properties of NiPS$_3$ and demonstrates the feasibility of resolving intrinsic anisotropies by addressing crystallographic twinning in vdW magnets.

cond-mat.mtrl-sci

Emergent giant topological Hall effect in twisted Fe3GeTe2 metallic system

The topological Hall effect, driven by the exchange interaction between conduction electrons and topological magnetic textures such as skyrmions, is a powerful probe for investigating the topological properties of magnetic materials. Typically, this phenomenon arises in systems with broken global inversion symmetry, where Dzyaloshinskii-Moriya interactions stabilize such textures. Here, we report the discovery of an emergent giant topological Hall effect in the twisted Fe3GeTe2 metallic system, which notably preserves the general global inversion symmetry. This effect manifests exclusively within a narrow window of "magic" twist angles ranging from 0.45{\deg} to 0.75{\deg}, while it is absent identically outside of that range, highlighting its unique and emergent nature. Micromagnetic simulations reveal that this topological Hall effect originates from a skyrmion lattice induced by alternating in-plane and layer-contrasting Dzyaloshinskii-Moriya interactions that result from local inversion symmetry breaking. Our findings underscore twisted Fe3GeTe2 as a versatile platform for engineering and controlling topological magnetic textures in metallic twisted van der Waals magnets, thereby opening up new avenues for next-generation spintronic devices.

cond-mat.mtrl-sci

Novel magnetic-field-free switching behavior in vdW-magnet/oxide heterostructure

Magnetization switching by charge current without a magnetic field is essential for device applications and information technology. It generally requires a current-induced out-of-plane spin polarization beyond the capability of conventional ferromagnet/heavy-metal systems, where the current-induced spin polarization aligns in-plane orthogonal to the in-plane charge current and out-of-plane spin current. Here, we demonstrate a new approach for magnetic-field-free switching by fabricating a van-der-Waals magnet and oxide Fe3GeTe2/SrTiO3 heterostructure. This new magnetic-field-free switching is possible because the current-driven accumulated spins at the Rashba interface precess around an emergent interface magnetism, eventually producing an ultimate out-of-plane spin polarization. This interpretation is further confirmed by the switching polarity change controlled by the in-plane initialization magnetic fields with clear hysteresis. We successfully combined van-der-Waals magnet and oxide for the first time, especially taking advantage of spin-orbit torque on the SrTiO3 oxide. This allows us to establish a new way of magnetic field-free switching. Our work demonstrates an unusual perpendicular switching application of large spin Hall angle materials and precession of accumulated spins, and in doing so, opens up a new field and opportunities for van-der-Waals magnets and oxide spintronics.

cond-mat.mtrl-sci

Magnetoelectric effect in van der Waals magnets

The magnetoelectric (ME) effect is a fundamental concept in modern condensed matter physics and represents the electrical control of magnetic polarisations or vice versa. Two-dimensional (2D) van-der-Waals (vdW) magnets have emerged as a new class of materials and exhibit novel ME effects with diverse manifestations. This review emphasizes some important recent discoveries unique to vdW magnets: multiferroicity on two dimensions, spin-charge correlation, atomic ME effect and current-induced intrinsic spin-orbit torque, and electrical gating control and magnetic control of their electronic properties. We also highlight the promising route of utilizing quantum magnetic hetero- or homo-structures to engineer the ME effect and corresponding spintronic and optoelectronic device applications. Due to the intrinsic two-dimensionality, vdW magnets with those ME effects are expected to form a new, exciting research direction.

cond-mat.mtrl-sci

Imaging thermally fluctuating Nèel vectors in van der Waals antiferromagnet NiPS3

Studying antiferromagnetic domains is essential for fundamental physics and potential spintronics applications. Despite its importance, few systematic studies have been performed on van der Waals (vdW) antiferromagnets (AFMs) domains with high spatial resolutions, and direct probing of the Nèel vectors remains challenging. In this work, we found a multidomain in vdW AFM NiPS3, a material extensively investigated for its exotic magnetic exciton. We employed photoemission electron microscopy combined with the X-ray magnetic linear dichroism (XMLD-PEEM) to image the NiPS3's magnetic structure. The nanometer-spatial resolution of XMLD-PEEM allows us to determine local Nèel vector orientations and discover thermally fluctuating Néel vectors that are independent of the crystal symmetry even at 65 K, well below TN of 155 K. We demonstrate a Ni ions' small in-plane orbital moment anisotropy is responsible for the weak magneto-crystalline anisotropy. The observed multidomain's thermal fluctuations may explain the broadening of magnetic exciton peaks at higher temperatures.

cond-mat.mtrl-sci

New twisted van der Waals fabrication method based on strongly adhesive polymer

Observations of emergent quantum phases in twisted bilayer graphene prompted a flurry of activities in van-der-Waals (vdW) materials beyond graphene. Most current twisted experiments use a so-called tear-and-stack method using a polymer called PPC. However, despite the clear advantage of the current PPC tear-and-stack method, there are also technical limitations, mainly a limited number of vdW materials that can be studied using this PPC-based method. This technical bottleneck has been preventing further development of the exciting field beyond a few available vdW samples. To overcome this challenge and facilitate future expansion, we developed a new tear-and-stack method using a strongly adhesive polycaprolactone (PCL). With similar angular accuracy, our technology allows fabrication without a capping layer, facilitating surface analysis and ensuring inherently clean interfaces and low operating temperatures. More importantly, it can be applied to many other vdW materials that have remained inaccessible with the PPC-based method. We present our results on twist homostructures made with a wide choice of vdW materials - from two well-studied vdW materials (graphene and MoS$_2$) to the first-ever demonstrations of other vdW materials (NbSe$_2$, NiPS$_3$, and Fe$_3$GeTe$_2$). Therefore, our new technique will help expand $moir\acute{e}$ physics beyond few selected vdW materials and open up more exciting developments.

cond-mat.mtrl-sci

Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure

We report unidirectional charge transport in a $\mathrm{NbSe_2}$ noncentrosymmetric superconductor, which is exchange-coupled with a $\mathrm{CrPS_4}$ van der Waals layered antiferromagnetic insulator. The $\mathrm{NbSe_2/CrPS_4}$ bilayer device exhibits bias-dependent superconducting critical-current variations of up to $16\%$, with the magnetochiral anisotropy reaching $\sim 10^5\mathrm{\ T^{-1}A^{-1}}$. Furthermore, the $\mathrm{CrPS_4/NbSe_2/CrPS_4}$ spin-valve structure exhibits the superconducting diode effect with critical-current variations of up to $40\%$. We also utilize the magnetic proximity effect to induce switching in the superconducting state of the spin-valve structure. It exhibits an infinite magnetoresistance ratio depending on the field sweep direction and magnetization configuration. Our result demonstrates a novel route for enhancing the nonreciprocal response in the weak external field regime ($<50\mathrm{\ mT}$) by exploiting the magnetic proximity effect.

cond-mat.supr-con