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arXiv · 2111.10907

Engineering single donor detectors in doped silicon

A. A. Lasek·C. H. W. Barnes·T. Ferrus
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Abstract

We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown. Characterisation of the device at low temperatures and in magnetic field shows single donors can be electrostatically isolated near one of the tunnel barrier with either a single or a doubly occupancy. Such a model is well supported by capacitance-based simulations. Ability of using the D0 of such isolated donor as a charge detector is demonstrated by observing the charge stability diagram of a nearby and capacitively coupled semi-connected double quantum dot.

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A. A. Lasek, C. H. W. Barnes, T. Ferrus. 2021-11-21. Engineering single donor detectors in doped silicon. https://arxiv.org/abs/2111.10907

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