arXiv subjects

C. H. W. Barnes

Publications and source records attributed to C. H. W. Barnes.

At least 19 recordsLinked to original sources

arXiv2022

Engineering single donor detectors in doped silicon

We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown. Characterisation of the device at low temperatures and in magnetic field shows single donors can be electrostatically isolated near one of the tunnel barrier with either a single or a doubly occupancy. Such a model is well supported by capacitance-based simulations. Ability of using the D0 of such isolated donor as a charge detector is demonstrated by observing the charge stability diagram of a nearby and capacitively coupled semi-connected double quantum dot.

cond-mat.mes-hall↗

arXiv2022

Determining the Proximity Effect Induced Magnetic Moment in Graphene by Polarized Neutron Reflectivity and X-ray Magnetic Circular Dichroism

We report the magnitude of the induced magnetic moment in CVD-grown epitaxial and rotated-domain graphene in proximity with a ferromagnetic Ni film, using polarized neutron reflectivity (PNR) and X-ray magnetic circular dichroism (XMCD). The XMCD spectra at the C K-edge confirms the presence of a magnetic signal in the graphene layer and the sum rules give a magnetic moment of up to $\sim\,0.47\,μ$_B/C atom induced in the graphene layer. For a more precise estimation, we conducted PNR measurements. The PNR results indicate an induced magnetic moment of $\sim$ 0.53 $μ$_B/C atom at 10 K for rotated graphene and $\sim$ 0.38 $μ$_B/C atom at 10 K for epitaxial graphene. Additional PNR measurements on graphene grown on a non-magnetic Ni_9Mo_1 substrate, where no magnetic moment in graphene is measured, suggest that the origin of the induced magnetic moment is due to the opening of the graphene's Dirac cone as a result of the strong C pz-3d hybridization.

cond-mat.mes-hall↗

arXiv2021

Growth and Characterisation Studies of Eu$_3$O$_4$ Thin Films Grown on Si/SiO$_2$ and Graphene

We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu$_3$O$_4$, thin films grown on a Si/SiO$_2$ substrate and Si/SiO$_2$/graphene using molecular beam epitaxy. The X-ray diffraction scans show that highly-textured crystalline Eu$_3$O$_4$(001) films are grown on both substrates, whereas the film deposited on graphene has a better crystallinity than that grown on the Si/SiO$_2$ substrate. The SQUID measurements show that both films have a Curie temperature of about 5.5 K, with a magnetic moment of 0.0032 emu/g at 2 K. The mixed-valency of the Eu cations has been confirmed by the qualitative analysis of the depth-profile X-ray photoelectron spectroscopy measurements with the Eu$^{2+}$ : Eu$^{3+}$ ratio of 28 : 72. However, surprisingly, our films show no metamagnetic behaviour as reported for the bulk and powder form. Furthermore, the Raman spectroscopy scans show that the growth of the Eu$_3$O$_4$ thin films has no damaging effect on the underlayer graphene sheet. Therefore, the graphene layer is expected to retain its properties.

cond-mat.mtrl-sci↗

arXiv2021

Table-like magnetocaloric effect and enhanced refrigerant capacity in EuO1-δ thin films

An approach to adjusting the conduction band population for tuning the magnetic and magnetocaloric response of EuO1-δ thin films through control of oxygen vacancies (δ = 0, 0.025, and 0.09) is presented. The films each showed a paramagnetic to ferromagnetic transition around 65 K, with an additional magnetic ordering transition at higher temperatures in the oxygen deficient samples. All transitions are observed to be of second order. A maximum magnetic entropy change of 6.4 J/kg K over a field change of 2 T with a refrigerant capacity of 223 J/kg was found in the sample with δ = 0, and in all cases the refrigerant capacities of the thin films under study were found to exceed that reported for bulk EuO. Adjusting the oxygen content was shown to produce table-like magnetocaloric effects, desirable for ideal Ericsson-cycle magnetic refrigeration. These films are thus excellent candidates for small-scale magnetic cooling technology in the liquid nitrogen temperature range.

cond-mat.mtrl-sci↗

arXiv2021

Dirac Quantum Wells at Domain Walls in Antiferromagnetic Topological Insulators

We explore the emergence of spin-polarised flat-bands at head-to-head domain walls in a recently predicted class of antiferromagnetic topological insulators hosting planar magnetisation. We show, in the framework of quantum well physics, that by tuning the width of a domain wall one can control the functional form of the bound states appearing across it. Furthermore, we demonstrate the effect that the parity of the number of layers in a multilayer sample has on the electronic dispersion. In particular, the alignment of the magnetisation vectors on the terminating surfaces of odd layer samples affords particle-hole symmetry leading to the presence of linearly dispersing topologically non-trivial states around $E = 0$. By contrast, the lack of particle-hole symmetry in even layer samples results in a gapped system, with spin-polarised flat-bands appearing either side of a band gap, with characteristic energy well within terahertz energy scales. In addition to being a versatile platform for the development of spintronic devices, when many-body interactions are accounted for we predict that these flat-bands will host strong correlations capable of driving the system into novel topological phases.

cond-mat.mes-hall↗

arXiv2019

Analysis of a capped carbon nanotube (CNT) with linear-scaling density-functional theory

The apex region of a capped (5,5) carbon nanotube (CNT) has been modelled with the DFT package ONETEP, using boundary conditions provided by a classical calculation with a conducting surface in place of the CNT. Results from the DFT solution include the Fermi level and the physical distribution and energies of individual Kohn-Sham orbitals for the CNT tip. Application of an external electric field changes the orbital number of the highest occupied molecular orbital (the HOMO) and consequently changes the distribution of the HOMO on the CNT.

physics.app-ph↗

arXiv2018

Genuine Counterfactual Communication with a Nanophotonic Processor

In standard communication information is carried by particles or waves. Counterintuitively, in counterfactual communication particles and information can travel in opposite directions. The quantum Zeno effect allows Bob to transmit a message to Alice by encoding information in particles he never interacts with. The first suggested protocol not only required thousands of ideal optical components, but also resulted in a so-called "weak trace" of the particles having travelled from Bob to Alice, calling the scalability and counterfactuality of previous proposals and experiments into question. Here we overcome these challenges, implementing a new protocol in a programmable nanophotonic processor, based on reconfigurable silicon-on-insulator waveguides that operate at telecom wavelengths. This, together with our telecom single-photon source and highly-efficient superconducting nanowire single-photon detectors, provides a versatile and stable platform for a high-fidelity implementation of genuinely trace-free counterfactual communication, allowing us to actively tune the number of steps in the Zeno measurement, and achieve a bit error probability below 1%, with neither post-selection nor a weak trace. Our demonstration shows how our programmable nanophotonic processor could be applied to more complex counterfactual tasks and quantum information protocols.

quant-ph↗

arXiv2017

Evaluation of Counterfactuality in Counterfactual Communication Protocols

We provide an in-depth investigation of parameter estimation in Nested Mach-Zehnder interferometers (NMZIs) using two information measures: the Shannon mutual information and the classical Fisher information. Protocols for counterfactual communition (CFC) have, so far, been based on two different definitions of counterfactuality. In particular, some schemes have been based on NMZI devices, but have recently been subject to criticism. We provide a methodology for evaluating the counterfactuality of these protocols, based on an information theoretical framework. More specifically, we make the assumption that any realistic quantum channel in MZI structures will have some weak uncontrolled interaction, and we use the Fisher information to measure counterfactual violations. The measure is used to evaluate the suggested counterfactual communication protocol by Salih et al. \cite{Salih13}. The protocol of Arvidsson-Shukur and Barnes \cite{ArvShukur16}, based on a different definition, is evaluated with a probability measure. Our results show that the definition of Arvidsson-Shukur and Barnes is satisfied by their scheme, whilst that of Salih et al. is only satisfied by perfect quantum channels. For realistic devices the latter protocol does not achieve its objective.

quant-ph↗

arXiv2017

Structural and magnetic properties of core-shell Au/Fe3O4 nanoparticles

We present a systematic study of core-shell Au/Fe_3O_4 nanoparticles produced by thermal decomposition under mild conditions. The morphology and crystal structure of the nanoparticles revealed the presence of Au core of = (6.9\pm 1.0) nm surrounded by Fe_3O_4 shell with a thickness of ~3.5 nm, epitaxially grown onto the Au core surface. The Au/Fe_3O_4 core-shell structure was demonstrated by high angle annular dark field scanning transmission electron microscopy analysis. The magnetite shell grown on top of the Au nanoparticle displayed a thermal blocking state at temperatures below T_B = 59 K and a relaxed state well above T_B. Remarkably, an exchange bias effect was observed when cooling down the samples below room temperature under an external magnetic field. Moreover, the exchange bias field (H_{EX}) started to appear at T~40 K and its value increased by decreasing the temperature. This effect has been assigned to the interaction of spins located in the magnetically disordered regions (in the inner and outer surface of the Fe_3O_4 shell) and spins located in the ordered region of the Fe_3O_4 shell.

cond-mat.mtrl-sci↗

arXiv2016

Ground-state electronic structure of quasi-one-dimensional wires in semiconductor heterostructures

We apply density functional theory, in the local density approximation, to a quasi-one-dimensional electron gas in order to quantify the effect of Coulomb and correlation effects in modulating, and therefore patterning, the charge density distribution. Our calculations are presented specifically for surface-gate-defined quasi-one-dimensional quantum wires in a GaAs-AlGaAs heterostructure but we expect our results to apply more generally for other low dimensional semiconductor systems. We show that at high densities with strong confinement, screening of electrons in the direction transverse to the wire is efficient and density modulations are not visible. In the low-density, weak-confinement regime, the exchange-correlation potential induces small density modulations as the electrons are depleted from the wire. At the weakest confinements and lowest densities, the electron density splits into two rows thereby forming a pair of quantum wires that lie beneath the surface gates. An additional double-well external potential forms at very low density which enhances this row splitting phenomenon. We produce phase diagrams that show a transition between the presence of a single quantum wire in a split-gate structure and two quantum wires. We suggest that this phenomenon can be used to pattern and modulate the electron density in low-dimensional structures with particular application to systems where a proximity effect from a surface gate would be valuable.

cond-mat.mes-hall↗

arXiv2016

An optimal single-electron charge qubit for solid-state double quantum dots

We report on an optimal single-electron charge qubit for a solid-state double quantum dot (DQD) system and analyse its dynamics under a time-dependent linear detuning, using GPU accelerated numerical solutions to the time-dependent Schrödinger equation. The optimal qubit is found to have basis states defined as the symmetric and antisymmetric linear combinations of the lowest energy bonding and anti-bonding states of the DQD at zero bias. In contrast to charge qubits defined by the two localised ground states of the uncoupled DQD, this choice of the basis causes the resulting dynamics to have a maximal overlap with an idealised two-state model. Our optimal qubit basis states are not localised to a single quantum dot and, as such, initialising the qubit requires a particular sequence of gate pulses to take the system from an initial fiducial state of the DQD to the logical $0$ or $1$. We determine this sequence using pulses that incorporate the expected experimental finite rise times. We also show how to perform arbitrary single qubit operations on the Bloch sphere using spin-echo type pulsing, allowing us to obtain any qubit state with at most two single pulses. Measurement of the optimal qubits is achieved by determining the probability of finding the electron in one of the dots.

quant-ph↗

arXiv2014

Long-range electronic reconstruction to a $d_{xz,yz}$-dominated Fermi surface below the LaAlO$_3$/SrTiO$_3$ interface

Low dimensionality, broken symmetry and easily-modulated carrier concentrations provoke novel electronic phase emergence at oxide interfaces. However, the spatial extent of such reconstructions - i.e. the interfacial "depth" - remains unclear. Examining LaAlO$_3$/SrTiO$_3$ heterostructures at previously unexplored carrier densities $n_{2D}\geq6.9\times10^{14}$ cm$^{-2}$, we observe a Shubnikov-de Haas effect for small in-plane fields, characteristic of an anisotropic 3D Fermi surface with preferential $d_{xz,yz}$ orbital occupancy extending over at least 100~nm perpendicular to the interface. Quantum oscillations from the 3D Fermi surface of bulk doped SrTiO$_3$ emerge simultaneously at higher $n_{2D}$. We distinguish three areas in doped perovskite heterostructures: narrow ($<20$ nm) 2D interfaces housing superconductivity and/or other emergent phases, electronically isotropic regions far ($>120$ nm) from the interface and new intermediate zones where interfacial proximity renormalises the electronic structure relative to the bulk.

cond-mat.str-el↗

arXiv2013

The Vortex Signature of Discrete Ferromagnetic Dipoles at the LaAlO$_3$/SrTiO$_3$ Interface

A hysteretic in-plane magnetoresistance develops below the superconducting transition of LaAlO$_3$/SrTiO$_3$ interfaces for $\left|H_{/\!/}\right|<$ 0.15 T, independently of the carrier density or oxygen annealing. We show that this hysteresis arises from vortex depinning within a thin superconducting layer, in which the vortices are created by discrete ferromagnetic dipoles located solely above the layer. We find no evidence for finite-momentum pairing or bulk magnetism and hence conclude that ferromagnetism is strictly confined to the interface, where it competes with superconductivity.

cond-mat.supr-con↗

arXiv2012

Characterisation of Ferromagnetic Rings for Zernike Phase Plates using the Aharonov-Bohm effect

Holographic measurements on magnetised thin-film cobalt rings have demonstrated both onion and vortex states of magnetisation. For a ring in the vortex state, the difference between phases of electron paths that pass through the ring and those that travel outside it was found to agree very well with Aharonov-Bohm theory within measurement error. Thus the magnetic flux in thin-film rings of ferromagnetic material can provide the phase shift required for phase plates in transmission electron microscopy. When a ring of this type is used as a phase plate, scattered electrons will be intercepted over a radial range similar to the ring width. A cobalt ring of thickness 20 nm can produce a phase difference of pi/2 from a width of just under 30 nm, suggesting that the range of radial interception for this type of phase plate can be correspondingly small.

physics.ins-det↗

arXiv2011

On-demand single-electron transfer between distant quantum dots

Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part to another. For example, in a quantum computer[1] decoherence and circuit complexity can be reduced by separating qubit manipulation from measurement and by providing some means to transport electrons from one to the other.[2] Tunnelling between neighbouring dots has been demonstrated[3, 4] with great control, and the manipulation of electrons in single and double-dot systems is advancing rapidly.[5-8] For distances greater than a few hundred nanometres neither free propagation nor tunnelling are viable whilst maintaining confinement of single electrons. Here we show how a single electron may be captured in a surface acoustic wave minimum and transferred from one quantum dot to a second unoccupied dot along a long empty channel. The transfer direction may be reversed and the same electron moved back and forth over sixty times without error, a cumulative distance of 0.25 mm. Such on-chip transfer extends communication between quantum dots to a range that may allow the integration of discrete quantum information-processing components and devices.

cond-mat.mes-hall↗

arXiv2011

Thickness-dependent magnetic properties of oxygen-deficient EuO

We have studied how the magnetic properties of oxygen-deficient EuO sputtered thin films vary as a function of thickness. The magnetic moment, measured by polarized neutron reflectometry, and the Curie temperature are found to decrease with reducing thickness. Our results indicate that the reduced number of nearest neighbors, band bending and the partial depopulation of the electronic states that carry the spins associated with the 4f orbitals of Eu are all contributing factors in the surface-induced change of the magnetic properties of EuO$_{1-x}$.

cond-mat.mtrl-sci↗

arXiv2011

Magnetism in graphite oxide: The role of epoxy groups

We investigate the magnetism in graphite by controlled oxidation. Our approach renders graphite an insulator while maintaining its structure. Fourier transform infrared spectroscopy and X-ray absorption near edge structure spectra reveal that graphite oxide has epoxy groups on its surface and it is not thermally stable. Magnetic susceptibility data exhibit negative Curie temperature, field irreversibility, and slow relaxation. The magnetic properties diminish after the epoxy groups are destroyed. The overall results indicate the unexpected magnetism is associated with the presence of epoxy groups.

cond-mat.str-el↗

arXiv2010

Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors

We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at the Si-SiO2 interface. The amplitude of these fluctuations is controlled by both the density of ions in the oxide and their position relative to the Si-SiO2 interface. Owing to the high mobility of the ions at room temperature, it is possible to move them with the application of a suitable electric field. We show that, in this configuration, such a device can be used to control both the disorder and the electron-electron interaction strength at the Si-SiO2 interface.

cond-mat.str-el↗