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arXiv · 2111.15170

Spin-Relaxation Mechanisms in InAs Quantum Well Heterostructures

J. D. S. Witt·S. J. Pauka·G. C. Gardner·S. Gronin·T. Wang·C. Thomas·M. J. Manfra·D. J. Reilly·M. C. Cassidy
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Abstract

The spin-orbit interaction and spin-relaxation mechanisms of a shallow InAs quantum well heterostructure are investigated by magnetoconductance measurements as a function of an applied top-gate voltage. The data were fit using the Iordanskii--Lyanda-Geller--Pikus model and two distinct transport regimes were identified which correspond to the first and second sub-bands of the quantum well. The spin-orbit interaction splitting energy is extracted from the fits to the data, which also displays two distinct regimes. The different sub-band regimes exhibit different spin-scattering mechanisms, the identification of which, is of relevance for device platforms of reduced dimensionality which utilise the spin-orbit interaction.

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J. D. S. Witt, S. J. Pauka, G. C. Gardner, S. Gronin, T. Wang, C. Thomas, M. J. Manfra, D. J. Reilly, M. C. Cassidy. 2021-11-30. Spin-Relaxation Mechanisms in InAs Quantum Well Heterostructures. https://arxiv.org/abs/2111.15170

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