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arXiv · 2112.04586

Monolithic Integration of Quantum Resonant Tunneling Gate on a 22nm FD-SOI CMOS Process

Abstract

The proliferation of quantum computing technologies has fueled the race to build a practical quantum computer. The spectrum of the innovation is wide and encompasses many aspects of this technology, such as the qubit, control and detection mechanism, cryogenic electronics, and system integration. A few of those emerging technologies are poised for successful monolithic integration of cryogenic electronics with the quantum structure where the qubits reside. In this work, we present a fully integrated Quantum Processor Unit in which the quantum core is co-located with control and detection circuits on the same die in a commercial 22-nm FD-SOI process from GlobalFoundries. The system described in this work comprises a two dimensional (2D) 240 qubits array integrated with 8 detectors and 32 injectors operating at 3K and inside a two-stage Gifford-McMahon cryo-cooler. The power consumption of each detector and injector is 1mW and 0.27mW, respectively. The control sequence is programmed into an on-chip pattern generator that acts as a command and control block for all hardware in the Quantum Processor Unit. Using the aforementioned apparatus, we performed a quantum resonant tunneling experiment on two qubits inside the 2D qubit array. With supporting lab measurements, we demonstrate the feasibility of the proposed architecture in scaling-up the existing quantum core to thousands of qubits.

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BibTeXRIS

Imran Bashir, Dirk Leipold, Elena Blokhina, Mike Asker, David Redmond, Ali Esmailiyan, Panagiotis Giounanlis, Hans Haenlein, Xuton Wu, Andrii Sokolov, Dennis Andrade-Miceli, Andrew K. Mitchell, Robert Bogdan Staszewski. 2021-12-08. Monolithic Integration of Quantum Resonant Tunneling Gate on a 22nm FD-SOI CMOS Process. https://arxiv.org/abs/2112.04586

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