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arXiv · 2112.05852

Synthesis and crystal growth of novel layered bismuthides ATM2Bi2, (A = K, Rb; TM = Zn, Cd) with significant electron-deficient structure

Andrey Shilov·Kirill Pervakov·Konstantin Lyssenko·Vladimir Vlasenko·Dmitri Efremov·Bernd Büchner·Saicharan Aswartham·Igor Morozov
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Abstract

Layered bismuthides of the family ATM2Bi2 are showing very interesting structural and physical properties. Here, we report crystal growth and characterization of new ternary layered bismuthides: RbCd2Bi2, RbZn2Bi2 and KZn2Bi2. Single crystals were grown by self-flux technique. As grown crystals were characterized by combination of powder X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy and single crystal X-ray diffraction. All novel compounds crystallize in layered ThCr2Si2 structure type with plate-like morphology with weak bonding between layers. Significant structural difference between RbCd2Bi2 and AZn2Bi2 (A=K, Rb) was found.

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Andrey Shilov, Kirill Pervakov, Konstantin Lyssenko, Vladimir Vlasenko, Dmitri Efremov, Bernd Büchner, Saicharan Aswartham, Igor Morozov. 2021-12-10. Synthesis and crystal growth of novel layered bismuthides ATM2Bi2, (A = K, Rb; TM = Zn, Cd) with significant electron-deficient structure. https://arxiv.org/abs/2112.05852

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