Diffusion models for atomic scale electron currents in semiconductor, p-n junction

Jarek Duda

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arXiv · 2112.12557

Diffusion models for atomic scale electron currents in semiconductor, p-n junction

Jarek Duda

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Abstract

While semiconductor electronics is at heart of modern world, and now uses 5nm or smaller processes of single atoms, it seems there are missing models of actual electron currents in these scales - which could help with more conscious design of future electronics. This article proposes such practical methodology allowing to model approximated electron flows in semiconductor, nonlinear Ohm law in p-n junction, and hopefully more complex systems e.g. built of transistors. It assumes electron hopping between atoms using Maximal Entropy Random Walk based diffusion - chosen accordingly to (Jaynes) maximal entropy principle, this way leading to the same stationary probability density as quantum models. Due to Anderson-like localization in nonhomogeneous lattice of semiconductor, electrons are imprisoned in entopic wells, e.g. requiring to exceed a potential barrier for conductance.

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Jarek Duda. 2021-12-23. Diffusion models for atomic scale electron currents in semiconductor, p-n junction. https://arxiv.org/abs/2112.12557

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