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arXiv · 2202.01536

Heteroepitaxy of Large-Area, Monocrystalline Lead Halide Perovskite Films on Gallium Arsenide

Deying Kong·Yu Zhang·Dali Cheng·Enze Wang·Kaiyuan Zhang·Huachun Wang·Kai Liu·Lan Yin·Xing Sheng
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Abstract

Lead halide perovskite materials have been emerging as promising candidates for high-performance optoelectronic devices. Significant efforts have sought to realize monocrystalline perovskite films at a large scale. Here, we epitaxially grow monocrystalline methylammonium lead tribromide (MAPbBr3) films on lattice-matched gallium arsenide (GaAs) substrates at a centimeter scale. In particular, a solution-processed lead(II) sulfide (PbS) layer provides a lattice-matched and chemical protective interface for the solid-gas reaction to form MAPbBr3 films on GaAs. Structure characterizations identify the crystal orientations in the trilayer MAPbBr3/PbS/GaAs epi-structure and confirm the monocrystalline nature of MAPbBr3 on PbS/GaAs. The dynamic evolution of surface morphologies during the growth indicates a two-step epitaxial process. These fundamental understandings and practical growth techniques offer a viable guideline to approach high-quality perovskite films for previously inaccessible applications.

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Deying Kong, Yu Zhang, Dali Cheng, Enze Wang, Kaiyuan Zhang, Huachun Wang, Kai Liu, Lan Yin, Xing Sheng. 2022-02-03. Heteroepitaxy of Large-Area, Monocrystalline Lead Halide Perovskite Films on Gallium Arsenide. https://doi.org/10.1021/acsami.2c15243

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