A Magnetoelectric Memory Device Based on Pseudo-Magnetization

Tingting Shen; Orchi Hassan; Neil R. Dilley; Kerem Y. Camsari; Joerg Appenzeller

doi:10.1063/5.0140695

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arXiv · 2202.02203

A Magnetoelectric Memory Device Based on Pseudo-Magnetization

Tingting Shen·Orchi Hassan·Neil R. Dilley·Kerem Y. Camsari·Joerg Appenzeller

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Abstract

We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures. Theoretically, we show how a PE/FM combination can lead to non-volatility in pseudo-magnetization exhibiting ferroelectric-like behavior. The pseudo-magnetization can be manipulated by extremely low voltages especially when the FM is a low-barrier nanomagnet. Using a circuit model benchmarked against experiments, we determine the switching energy, delay, switching probability and retention time of the envisioned 1T/1C memory device in terms of magnetic and circuit parameters and discuss its thermal stability in terms of a key parameter called back-voltage vm which is an electrical measure of the strain-induced magnetic field. Taking advantage of ferromagnetic resonance (FMR) measurements, we experimentally extract values for vm in CoFeB films and circular nano-magnets deposited on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) which agree well with the theoretical values. Our experimental findings indeed indicate the feasibility of the proposed novel device and confirm the assumed parameters in our modeling effort.

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Tingting Shen, Orchi Hassan, Neil R. Dilley, Kerem Y. Camsari, Joerg Appenzeller. 2022-02-04. A Magnetoelectric Memory Device Based on Pseudo-Magnetization. https://doi.org/10.1063/5.0140695

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