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arXiv · 2202.05390

1/f Noise Under Drift And Thermal Agitation In Semiconductor Materials

Ferdinand Grueneis
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Abstract

Voss and Clarke observed 1/f noise in the square of Johnson noise across samples in thermal equilibrium without applying a current. We refer to this phenomenon as thermal 1/f noise. Voss and Clarke suggested spatially correlated temperature fluctuations as an origin of thermal 1/f noise; they also showed that thermal 1/f noise closely matches the 1/f spectrum obtained by passing a current through the sample. An intermittent generation-recombination (g-r) process has recently been introduced to interpret 1/f noise in semiconductors. The square of this intermittent g-r process generates a 1/f noise component which correlates with Voss and Clarke's empirical findings. Traps which intermittently rather than continuously generate g-r pulses are suggested as the origin of 1/f noise under drift and thermal agitation. We see no need to introduce correlated temperature fluctuations or oxide traps with a large distribution of time constants to explain 1/f noise.

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Ferdinand Grueneis. 2022-02-04. 1/f Noise Under Drift And Thermal Agitation In Semiconductor Materials. https://doi.org/10.1016/j.physa2022.126917

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