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arXiv · 2202.07217

High-frequency traveling-wave phononic cavity with sub-micron wavelength

Xin-Biao Xu·Jia-Qi Wang·Yuan-Hao Yang·Weiting Wang·Yan-Lei Zhang·Bao-Zhen Wang·Chun-Hua Dong·Luyan Sun·Guang-Can Guo·Chang-Ling Zou
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Abstract

Thin-film gallium nitride (GaN) as a proven piezoelectric material is a promising platform for the phononic integrated circuits, which hold great potential for scalable information processing processors. Here, an unsuspended traveling phononic resonator based on high-acoustic-index-contrast mechanism is realized in GaN-on-Sapphire with a frequency up to 5 GHz, which matches the typical superconducting qubit frequency. A sixfold increment in quality factor was found when temperature decreases from room temperature ($Q=5000$) to $7\,\mathrm{K}$ ($Q=30000$) and thus a frequency-quality factor product of $1.5\times10^{14}$ is obtained. Higher quality factors are available when the fabrication process is further optimized. Our system shows great potential in hybrid quantum devices via circuit quantum acoustodynamics.

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Xin-Biao Xu, Jia-Qi Wang, Yuan-Hao Yang, Weiting Wang, Yan-Lei Zhang, Bao-Zhen Wang, Chun-Hua Dong, Luyan Sun, Guang-Can Guo, Chang-Ling Zou. 2022-02-15. High-frequency traveling-wave phononic cavity with sub-micron wavelength. https://doi.org/10.1063/5.0086751

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