Dual function spin-wave logic gates based on electric field control magnetic anisotropy boundary

Kang Wang; Shaojie Hu; Fupeng Gao; Miaoxin Wang; Dawei Wang

doi:10.1063/5.0089890

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arXiv · 2202.13258

Dual function spin-wave logic gates based on electric field control magnetic anisotropy boundary

Kang Wang·Shaojie Hu·Fupeng Gao·Miaoxin Wang·Dawei Wang

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Abstract

Spin waves (SWs) have been considered a promising candidate for encoding information with lower power consumption. Here, we propose the dual function SW logic gates based on the electric field controlling the SW propagation in the Fe film of Fe/BaTiO3 heterostructure with the motion of magnetic anisotropy boundary (MAB). We show micromagnetic simulations to validate the AND-OR and NAND-NOR logic gates. Our research may find a path for simplifying integrated logic circuits using such dual function SW logic gates.

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Kang Wang, Shaojie Hu, Fupeng Gao, Miaoxin Wang, Dawei Wang. 2022-02-27. Dual function spin-wave logic gates based on electric field control magnetic anisotropy boundary. https://doi.org/10.1063/5.0089890

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