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arXiv · 2203.00082

High-precision real-space simulation of electrostatically-confined few-electron states

Christopher R. Anderson·Mark F. Gyure·Sam Quinn·Andrew Pan·Richard S. Ross·Andrey A. Kiselev
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Abstract

In this paper we present a computational procedure that utilizes real-space grids to obtain high precision approximations of electrostatically confined few-electron states such as those that arise in gated semiconductor quantum dots. We use the Full Configuration Interaction (FCI) method with a continuously adapted orthonormal orbital basis to approximate the ground and excited states of such systems. We also introduce a benchmark problem based on a realistic analytical electrostatic potential for quantum dot devices. We show that our approach leads to highly precise computed energies and energy differences over a wide range of model parameters. The analytic definition of the benchmark allows for a collection of tests that are easily replicated, thus facilitating comparisons with other computational approaches.

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Christopher R. Anderson, Mark F. Gyure, Sam Quinn, Andrew Pan, Richard S. Ross, Andrey A. Kiselev. 2022-02-28. High-precision real-space simulation of electrostatically-confined few-electron states. https://doi.org/10.1063/5.0089350

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